SP8J65TB1

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOP-8

Number of Channels:

2 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

7 A

Rds On - Drain-Source Resistance:

21.5 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

18 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2 W

Configuration:

Dual

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

2 P-Channel

Brand:

ROHM Semiconductor

Fall Time:

65 ns

Product Type:

MOSFET

Rise Time:

40 ns, 40 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

80 ns

Typical Turn-On Delay Time:

12 ns

Tags

SP8J6, SP8J, SP8