2SC5949-O(Q)

Product Attribute

Attribute Value

Manufacturer:

Toshiba

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

Through Hole

Package / Case:

TO-3P-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

200 V

Collector- Base Voltage VCBO:

200 V

Emitter- Base Voltage VEBO:

5 V

Collector-Emitter Saturation Voltage:

0.4 V

Maximum DC Collector Current:

15 A

Gain Bandwidth Product fT:

30 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Series:

2SC5949

DC Current Gain hFE Max:

160

Height:

5.2 mm (Max)

Length:

26 mm

Width:

20.5 mm (Max)

Brand:

Toshiba

Continuous Collector Current:

15 A

DC Collector/Base Gain hfe Min:

55

Pd - Power Dissipation:

220 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

100

Subcategory:

Transistors

Unit Weight:

0.238311 oz

Tags

2SC5949, 2SC594, 2SC59, 2SC5, 2SC