DN0150BLP4-7

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

SMD/SMT

Package / Case:

DFN-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

50 V

Collector- Base Voltage VCBO:

60 V

Emitter- Base Voltage VEBO:

5 V

Maximum DC Collector Current:

0.1 A

Gain Bandwidth Product fT:

60 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Series:

DN0150

DC Current Gain hFE Max:

200 at 2 mA, 6 V

Height:

0.35 mm

Length:

1 mm

Packaging:

Reel

Width:

0.6 mm

Brand:

Diodes Incorporated

DC Collector/Base Gain hfe Min:

200

Pd - Power Dissipation:

450 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

3000

Subcategory:

Transistors

Tags

DN0150BLP4-7, DN0150BL, DN0150B, DN015, DN01, DN0