DMN61D8LVT-13

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TSOT-26-6

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

630 mA

Rds On - Drain-Source Resistance:

1.1 Ohms

Vgs th - Gate-Source Threshold Voltage:

1.3 V

Vgs - Gate-Source Voltage:

12 V

Qg - Gate Charge:

740 pC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1.09 W

Configuration:

Dual

Channel Mode:

Enhancement

Packaging:

Reel

Series:

DMN61

Transistor Type:

2 N-Channel

Brand:

Diodes Incorporated

Forward Transconductance - Min:

80 mS

Fall Time:

440 ns

Product Type:

MOSFET

Rise Time:

301 ns

Factory Pack Quantity:

10000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

582 ns

Typical Turn-On Delay Time:

131 ns

Unit Weight:

0.000459 oz

Tags

DMN61D8LV, DMN61D8, DMN61D, DMN61, DMN6, DMN