IPP60R280E6

IPP60R280E6
Mfr. #:
IPP60R280E6
メーカー:
Infineon Technologies
説明:
MOSFET N-Ch 650V 13.8A TO220-3 CoolMOS E6
ライフサイクル:
メーカー新製品
データシート:
IPP60R280E6 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-220-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
600 V
Id-連続ドレイン電流:
13.8 A
Rds On-ドレイン-ソース抵抗:
250 mOhms
Vgs-ゲート-ソース間電圧:
20 V
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
104 W
構成:
独身
商標名:
CoolMOS
包装:
チューブ
高さ:
15.65 mm
長さ:
10 mm
シリーズ:
CoolMOS E6
トランジスタタイプ:
1 N-Channel
幅:
4.4 mm
ブランド:
インフィニオンテクノロジーズ
製品タイプ:
MOSFET
ファクトリーパックの数量:
500
サブカテゴリ:
MOSFET
パーツ番号エイリアス:
IPP60R280E6XKSA1 IPP6R28E6XK SP000797290
単位重量:
0.211644 oz
Tags
IPP60R280E, IPP60R28, IPP60R2, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 13.8A 3-Pin(3+Tab) TO-220 Tube
*** Stop Electro
Power Field-Effect Transistor, 13.8A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon SCT
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS
***ineon
CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
モデル メーカー 説明 ストック 価格
IPP60R280E6XKSA1
DISTI # IPP60R280E6XKSA1-ND
Infineon Technologies AGMOSFET N-CH 600V 13.8A TO220
RoHS: Compliant
Min Qty: 500
Container: Tube
Temporarily Out of Stock
  • 500:$1.5683
IPP60R280E6
DISTI # SP000797290
Infineon Technologies AGTrans MOSFET N-CH 600V 13.8A 3-Pin TO-220 Tube (Alt: SP000797290)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1:€1.5069
  • 10:€1.1709
  • 25:€1.0869
  • 50:€1.0529
  • 100:€1.0349
  • 500:€1.0259
  • 1000:€1.0119
IPP60R280E6XK
DISTI # IPP60R280E6XKSA1
Infineon Technologies AGTrans MOSFET N-CH 600V 13.8A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP60R280E6XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 500:$1.1729
  • 1000:$1.1309
  • 2000:$1.0899
  • 3000:$1.0529
  • 5000:$1.0349
IPP60R280E6
DISTI # 726-IPP60R280E6
Infineon Technologies AGMOSFET N-Ch 650V 13.8A TO220-3 CoolMOS E6
RoHS: Compliant
370
  • 1:$2.4000
  • 10:$2.0400
  • 100:$1.6300
  • 500:$1.4300
IPP60R280E6Infineon Technologies AGPower Field-Effect Transistor, 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
1351
  • 1000:$0.9900
  • 500:$1.0400
  • 100:$1.0800
  • 25:$1.1300
  • 1:$1.2200
IPP60R280E6XKSA1
DISTI # IPP60R280E6
Infineon Technologies AGN-Ch 600V 13,8A 104W 0,28R TO220
RoHS: Compliant
450
  • 1:€5.1000
  • 10:€2.1000
  • 50:€1.1000
  • 100:€1.0000
画像 モデル 説明
SMAJ6.5CA

Mfr.#: SMAJ6.5CA

OMO.#: OMO-SMAJ6-5CA

TVS Diodes / ESD Suppressors 400W 6.5V 5% Bi-Directional
BD140

Mfr.#: BD140

OMO.#: OMO-BD140

Bipolar Transistors - BJT PNP Audio Amplfier
BD139

Mfr.#: BD139

OMO.#: OMO-BD139

Bipolar Transistors - BJT NPN Audio Amplifier
FDG316P

Mfr.#: FDG316P

OMO.#: OMO-FDG316P

MOSFET SC70-6 P-CH -30V
SMAJ6.5CA

Mfr.#: SMAJ6.5CA

OMO.#: OMO-SMAJ6-5CA-LITTELFUSE

TVS Diodes - Transient Voltage Suppressors 6.5volts 500/1000uA 35.7 Amps Bi-Di
RGA101M1CBK-0611G

Mfr.#: RGA101M1CBK-0611G

OMO.#: OMO-RGA101M1CBK-0611G-1130

Aluminum Electrolytic Capacitors - Leaded 16V 100uF 105C 6.3x11mm
RGA101M1EBK-0611G

Mfr.#: RGA101M1EBK-0611G

OMO.#: OMO-RGA101M1EBK-0611G-1130

Aluminum Electrolytic Capacitors - Leaded 25V 100uF 105C 6.3x11mm
RGA101M1VBK-0811G

Mfr.#: RGA101M1VBK-0811G

OMO.#: OMO-RGA101M1VBK-0811G-1130

Aluminum Electrolytic Capacitors - Leaded 35V 100uF 105C 8x11.5mm
FDG316P

Mfr.#: FDG316P

OMO.#: OMO-FDG316P-ON-SEMICONDUCTOR

MOSFET P-CH 30V 1.6A SC70-6
55J1K0E

Mfr.#: 55J1K0E

OMO.#: OMO-55J1K0E-OHMITE

Wirewound Resistors - Through Hole 5W 1K Ohm 5%
可用性
ストック:
354
注文中:
2337
数量を入力してください:
IPP60R280E6の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$2.39
$2.39
10
$2.03
$20.30
100
$1.63
$163.00
500
$1.42
$710.00
1000
$1.18
$1 180.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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