TGF2929-HM

Mfr. #:: TGF2929-HM
メーカー:: Qorvo
説明:: RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
ライフサイクル:: メーカー新製品
データシート:: TGF2929-HM データシート
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ECAD Model:
詳しくは:: TGF2929-HM 詳しくは

製品属性
属性値

メーカー

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

シリーズ: TGF

包装: ワッフル

パーツエイリアス: 1135635

取り付けスタイル: SMD / SMT

動作-温度-範囲: - 40 C to + 85 C

パッケージ-ケース: Flange Ceramic-2

テクノロジー: GaN SiC

構成: 独身

トランジスタタイプ: HEMT

利得: 17.4 dB

出力電力: 132 W

Pd-電力損失: 140 W

最高作動温度: + 85 C

最低作動温度: - 40 C

動作周波数: DC to 3.5 GHz

Id-連続-ドレイン-電流: 7.2 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 50 V

トランジスタ-極性: Nチャネル

開発キット: TGF2929-HM EVB1

Vgs-ゲート-ソース-ブレークダウン-電圧: - 2.8 V

Tags: TGF292, TGF29, TGF2, TGF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF2929-HM 説明

***W: RF Power Transistor, DC to 3.5 GHz, 100 W, 17.4 dB, 28 V, GaN, NI-360 Hermetic

***hardson RFPD: RF POWER TRANSISTOR

TGF2929-HM 詳しくは

TGF2929 GaN RF Power Transistors: Qorvo TGF2929 GaN RF Power Transistors are discrete GaN on SiC HEMTs that operate from DC to 3.5GHz. They are constructed with the QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

モデル	メーカー	説明	ストック	価格
TGF2929-HM DISTI # 772-TGF2929-HM	Qorvo	RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN RoHS: Compliant	0	25:$338.4400
TGF2929-HM-EVB DISTI # 772-TGF2929-HM-EVB	Qorvo	RF Development Tools RoHS: Compliant	0	1:$875.0000

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