FGA40N60UFDTU

Mfr. #:: FGA40N60UFDTU
メーカー:: ON Semiconductor
説明:: IGBT 600V 40A 160W TO3P
ライフサイクル:: メーカー新製品
データシート:: FGA40N60UFDTU データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

製品属性
属性値

Tags: FGA40N60U, FGA40N60, FGA40N6, FGA40N, FGA40, FGA4, FGA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FGA40N60UFDTU 説明

***ca Corp: Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel

***i-Key: IGBT 600V 40A 160W TO3P

***ser: IGBTs Ultrafast IGBT

***i-Key Marketplace: IGBT, 40A, 600V, N-CHANNEL

***S: French Electronic Distributor since 1988

***p One Stop Global: Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-220AB Tube

***ineon SCT: 600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS

***ure Electronics: IRG4BC40WPBF Series 600 V 20 A N-Channel Latest Generation IGBT - TO-220AB

***ineon: Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine

*** Stop Electro: Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, TO-220; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 160W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur

***ment14 APAC: IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Current Temperature:25°C; Fall Time Max:74ns; Fall Time tf:74ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

*** Electronics: IGBT IRG4BC40UPBF IGBT 600V 40A 160W Through Hole TO-220AB 20A/600V TO-220AB

***p One Stop: Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-220AB Tube

***ineon SCT: 600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS

***ure Electronics: IRG4BC40UPbF Series 600 V 20 A N-Channel Ultrafast Speed IGBT - TO-220AB

***ineon: Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine

***itex: Transistor; IGBT; 600V; 40A; 160W; -55+150 deg.C; THT; TO220

***roFlash: Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ment14 APAC: IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Current Temperature:25°C; Device Marking:IRG4BC40UPBF; Fall Time tf:180ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:19ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***p One Stop: Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(2+Tab) D2PAK Tube

***ineon SCT: 600V Warp 60-150 kHz Discrete IGBT in a D2Pak package, D2PAK-3, RoHS

***ure Electronics: IRG4BC40W Series 600 V 40 A Insulated Gate Bipolar Transistor - D2PAK-3

***ment14 APAC: IGBT, D2-PAK; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:40A; Package / Case:D2-PAK; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:23ns; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:600V

***ark: Transistor,igbt,n-Chan+Diode,600V V(Br)Ces,32A I(C),to-247Var Rohs Compliant: Yes

***et: Trans IGBT Chip N-CH 600V 32A 3-Pin(3+Tab) TO-3P(N) Rail

***rchild Semiconductor: Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.

***icroelectronics: Trench gate field-stop IGBT, V series 600 V, 20 A very high speed

***ical: Trans IGBT Chip N-CH 600V 40A 167000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, SINGLE, 600V, 40A, TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 167W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins:

***ical: Trans IGBT Chip N-CH 600V 40A 130000mW 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: STGP19NC60HD Series 600 V 19 A Very Fast IGBT Flange Mount - TO-220

***el Electronic: STMICROELECTRONICS STGP19NC60HD IGBT Single Transistor, 40 A, 2.5 V, 130 W, 600 V, TO-220, 3 Pins

***r Electronics: Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***icroelectronics: 19 A, 600 V, very fast IGBT with Ultrafast diode

***nell: IGBT, N 600V 19A TO-220; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 130W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; O

Market price

モデル	メーカー	説明	ストック	価格
FGA40N60UFDTU DISTI # FGA40N60UFDTU-ND	ON Semiconductor	IGBT 600V 40A 160W TO3P RoHS: Compliant Min Qty: 450 Container: Tube	Limited Supply - Call
FGA40N60UFDTU DISTI # FGA40N60UFDTU	ON Semiconductor	IGBTs - Bulk (Alt: FGA40N60UFDTU) RoHS: Compliant Min Qty: 154 Container: Bulk	Americas - 0	462:$1.9900 770:$1.9900 1540:$1.9900 154:$2.0900 308:$2.0900
FGA40N60UFDTU DISTI # 512-FGA40N60UFDTU	ON Semiconductor	Motor / Motion / Ignition Controllers & Drivers Ultrafast IGBT RoHS: Compliant	0
FGA40N60UFDTU	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel RoHS: Compliant	142	1000:$2.1500 500:$2.2600 100:$2.3500 25:$2.4500 1:$2.6400

画像	モデル	説明
	Mfr.#: FGA40N65SMD OMO.#: OMO-FGA40N65SMD	IGBT Transistors 650V, 40A Field Stop IGBT
	Mfr.#: FGA40N65SMD-- OMO.#: OMO-FGA40N65SMD---1190	ブランドニューオリジナル
	Mfr.#: FGA40N120AND OMO.#: OMO-FGA40N120AND-1190	ブランドニューオリジナル
	Mfr.#: FGA40N120ANTD OMO.#: OMO-FGA40N120ANTD-1190	ブランドニューオリジナル
	Mfr.#: FGA40N150D OMO.#: OMO-FGA40N150D-1190	ブランドニューオリジナル
	Mfr.#: FGA40N60 OMO.#: OMO-FGA40N60-1190	ブランドニューオリジナル
	Mfr.#: FGA40N60AND OMO.#: OMO-FGA40N60AND-1190	ブランドニューオリジナル
	Mfr.#: FGA40N60UF OMO.#: OMO-FGA40N60UF-1190	ブランドニューオリジナル
	Mfr.#: FGA40N60UFD OMO.#: OMO-FGA40N60UFD-1190	ブランドニューオリジナル
	Mfr.#: FGA40N65 650V 40A IGBT OMO.#: OMO-FGA40N65-650V-40A-IGBT-1190	ブランドニューオリジナル

FGA40N60UFDTU

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes