SQS411ENW-T1_GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PowerPAK-1212-8W

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

40 V

Id - Continuous Drain Current:

16 A

Rds On - Drain-Source Resistance:

27.3 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

50 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

53.6 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

1 P-Channel TrenchFET Power MOSFET

Brand:

Vishay / Siliconix

Forward Transconductance - Min:

23 S

Fall Time:

6.4 ns

Product Type:

MOSFET

Rise Time:

3 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

39.6 ns

Typical Turn-On Delay Time:

10.5 ns

Tags

SQS41, SQS4, SQS