SI7998DP-T1-GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

E

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PowerPAK-SO-8

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

25 A, 30 A

Rds On - Drain-Source Resistance:

9.3 mOhms, 5.3 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

26 nC, 48 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

22 W, 40 W

Configuration:

Dual

Channel Mode:

Enhancement

Tradename:

TrenchFET

Packaging:

Reel

Series:

SI7

Transistor Type:

2 N-Channel

Brand:

Vishay / Siliconix

Forward Transconductance - Min:

45 S, 71 S

Fall Time:

10 ns, 13 ns

Product Type:

MOSFET

Rise Time:

15 ns, 17 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

22 ns, 35 ns

Typical Turn-On Delay Time:

20 ns, 26 ns

Part # Aliases:

SI7998DP-GE3

Unit Weight:

0.017870 oz

Tags

SI799, SI79, SI7