ZVN4210A

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-92-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

450 mA

Rds On - Drain-Source Resistance:

1.5 Ohms

Vgs th - Gate-Source Threshold Voltage:

800 mV

Vgs - Gate-Source Voltage:

10 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

700 mW

Configuration:

Single

Channel Mode:

Enhancement

Height:

4.95 mm

Length:

4.95 mm

Product:

MOSFET Small Signal

Series:

ZVN4210

Transistor Type:

1 N-Channel

Type:

FET

Brand:

Diodes Incorporated

Forward Transconductance - Min:

250 mS

Fall Time:

30 ns

Product Type:

MOSFET

Rise Time:

8 ns

Factory Pack Quantity:

4000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

20 ns

Typical Turn-On Delay Time:

4 ns

Unit Weight:

0.016000 oz

Tags

ZVN4210A, ZVN421, ZVN42, ZVN4, ZVN