FDMC8622

FDMC8622
Mfr. #:
FDMC8622
メーカー:
ON Semiconductor / Fairchild
説明:
MOSFET 100V N-Channel PowerTrench MOSFET
ライフサイクル:
メーカー新製品
データシート:
FDMC8622 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
FDMC8622 詳しくは
製品属性
属性値
メーカー:
オン・セミコンダクター
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
Power-33-8
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
100 V
Id-連続ドレイン電流:
16 A
Rds On-ドレイン-ソース抵抗:
56 mOhms
Qg-ゲートチャージ:
3 nC, 5.2 nC
最高作動温度:
+ 150 C
Pd-消費電力:
31 W
構成:
独身
商標名:
PowerTrench
包装:
リール
高さ:
0.8 mm
長さ:
3.3 mm
シリーズ:
FDMC8622
トランジスタタイプ:
1 N-Channel
幅:
3.3 mm
ブランド:
オン・セミコンダクター/フェアチャイルド
フォワード相互コンダクタンス-最小:
8.9 S
製品タイプ:
MOSFET
ファクトリーパックの数量:
3000
サブカテゴリ:
MOSFET
単位重量:
0.007055 oz
Tags
FDMC862, FDMC86, FDMC8, FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Shielded Gate Power Trench® MOSFET 100V, 16A, 56mΩ
***ure Electronics
Single N-Channel 100 V 98 mOhm 7.3 nC 2.3 W PowerTrench SMT Mosfet - MLP-3.3x3.3
***r Electronics
Power Field-Effect Transistor, 4A I(D), 100V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
***nell
MOSFET, N CH, 100V, 16A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0437ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.9V; Power Dissipation Pd:31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
Fairchild PowerTrench MOSFETs
FDMC8xxxx N-Ch Shielded Gate PowerTrench® MOSFETs
ON Semiconductor FDMC8xxxx N-Channel Shielded Gate PowerTrench® MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. FDMC8xxxx MOSFETs are designed for use in DC-DC conversion applications.Learn More
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
N-Channel PowerTrench® MOSFETs
ON Semiconductor N-Channel PowerTrench® MOSFETs are produced using advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. ON Semiconductor N-Channel PowerTrench® MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.The FDD10N20LZ and FDD7N25LZ are N-Channel enhancement mode power field effect transistors that are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.The FDMC6296 is a single N-Channel MOSFET in a thermally efficient MicroFET Package that has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a "high side" control swtich or "low side" synchronous rectifier.Learn more
モデル メーカー 説明 ストック 価格
FDMC8622
DISTI # V72:2272_06337913
ON SemiconductorTrans MOSFET N-CH Si 100V 4A 8-Pin MLP EP T/R0
    FDMC8622
    DISTI # V36:1790_06337913
    ON SemiconductorTrans MOSFET N-CH Si 100V 4A 8-Pin MLP EP T/R0
    • 3000000:$0.4659
    • 1500000:$0.4663
    • 300000:$0.5042
    • 30000:$0.5758
    • 3000:$0.5880
    FDMC8622
    DISTI # FDMC8622CT-ND
    ON SemiconductorMOSFET N-CH 100V 4A POWER33
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    40In Stock
    • 1000:$0.6489
    • 500:$0.8219
    • 100:$0.9950
    • 10:$1.2760
    • 1:$1.4300
    FDMC8622
    DISTI # FDMC8622DKR-ND
    ON SemiconductorMOSFET N-CH 100V 4A POWER33
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    40In Stock
    • 1000:$0.6489
    • 500:$0.8219
    • 100:$0.9950
    • 10:$1.2760
    • 1:$1.4300
    FDMC8622
    DISTI # FDMC8622TR-ND
    ON SemiconductorMOSFET N-CH 100V 4A POWER33
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)
    On Order
    • 15000:$0.5376
    • 6000:$0.5586
    • 3000:$0.5880
    FDMC8622
    DISTI # FDMC8622
    ON SemiconductorTrans MOSFET N-CH 100V 4A 8-Pin Power 33 T/R (Alt: FDMC8622)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 30000:€0.4959
    • 18000:€0.5349
    • 12000:€0.5789
    • 6000:€0.6319
    • 3000:€0.7719
    FDMC8622
    DISTI # FDMC8622
    ON SemiconductorTrans MOSFET N-CH 100V 4A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC8622)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 30000:$0.4929
    • 18000:$0.5059
    • 12000:$0.5119
    • 6000:$0.5189
    • 3000:$0.5219
    FDMC8622
    DISTI # 27T6432
    ON SemiconductorFET 100V 56.0 MOHM MLP33 / REEL0
    • 30000:$0.5080
    • 18000:$0.5200
    • 12000:$0.5400
    • 6000:$0.6000
    • 3000:$0.6600
    • 1:$0.6880
    FDMC8622
    DISTI # 88T3280
    ON SemiconductorMOSFET, N CHANNEL, 100V, 16A, MLP 3.3X3.3,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0437ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.9V RoHS Compliant: Yes1807
    • 1000:$0.6060
    • 500:$0.7690
    • 250:$0.8190
    • 100:$0.8700
    • 50:$0.9570
    • 25:$1.0400
    • 10:$1.1300
    • 1:$1.3200
    FDMC8622
    DISTI # 512-FDMC8622
    ON SemiconductorMOSFET 100V N-Channel PowerTrench MOSFET
    RoHS: Compliant
    0
    • 1:$1.3100
    • 10:$1.1200
    • 100:$0.8610
    • 500:$0.7610
    • 1000:$0.6000
    • 3000:$0.5320
    • 9000:$0.5130
    FDMC8622
    DISTI # 2083268
    ON SemiconductorMOSFET, N CH, 100V, 16A, MLP 3.3X3.32422
    • 500:£0.5520
    • 250:£0.5880
    • 100:£0.6240
    • 25:£0.8110
    • 5:£0.9450
    FDMC8622
    DISTI # 2083268
    ON SemiconductorMOSFET, N CH, 100V, 16A, MLP 3.3X3.3
    RoHS: Compliant
    1807
    • 9000:$0.7890
    • 3000:$0.8190
    • 1000:$0.9230
    • 500:$1.1800
    • 100:$1.3300
    • 10:$1.7300
    • 1:$2.0100
    画像 モデル 説明
    ESDS312DBVR

    Mfr.#: ESDS312DBVR

    OMO.#: OMO-ESDS312DBVR

    TVS Diodes / ESD Suppressors 3.6V Data-Line Surge and 30kV ESD Protection Diode Array 5-SOT-23 -40 to 125
    CSD18543Q3A

    Mfr.#: CSD18543Q3A

    OMO.#: OMO-CSD18543Q3A

    MOSFET 60V, N ch NexFET MOSFETG , single SON3x3, 9.9mOhm 8-VSONP -55 to 150
    SI3459-B02-IM

    Mfr.#: SI3459-B02-IM

    OMO.#: OMO-SI3459-B02-IM

    Power Switch ICs - POE / LAN OCTAL 802.3Aat POE PSE Controller
    G6DN-1A DC12

    Mfr.#: G6DN-1A DC12

    OMO.#: OMO-G6DN-1A-DC12

    General Purpose Relays 1 Form A w/ 12VDC 5A, EN61010-2-201
    22201C106MAT2A

    Mfr.#: 22201C106MAT2A

    OMO.#: OMO-22201C106MAT2A

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V 10uF X7R 2220 20% Tol HIGH CV
    SI3459-B02-IM

    Mfr.#: SI3459-B02-IM

    OMO.#: OMO-SI3459-B02-IM-SILICON-LABS

    IC POE PSE 8 PORT 802.3AT 56QFN
    ABM8AIG-25.000MHZ-12-2Z-T3

    Mfr.#: ABM8AIG-25.000MHZ-12-2Z-T3

    OMO.#: OMO-ABM8AIG-25-000MHZ-12-2Z-T3-ABRACON

    CRYSTAL 25MHZ 12PF SMD
    ESDS312DBVR

    Mfr.#: ESDS312DBVR

    OMO.#: OMO-ESDS312DBVR-TEXAS-INSTRUMENTS

    FAMILY OF UNI-DIRECTIONAL SURGE
    SKRKAEE020

    Mfr.#: SKRKAEE020

    OMO.#: OMO-SKRKAEE020-1190

    SMT PUSH BUTTON - Tape and Reel (Alt: SKRKAEE020)
    22201C106MAT2A

    Mfr.#: 22201C106MAT2A

    OMO.#: OMO-22201C106MAT2A-AVX

    Cap Ceramic 10uF 100V X7R 20% Pad SMD 2220 125C T/R
    可用性
    ストック:
    Available
    注文中:
    3500
    数量を入力してください:
    FDMC8622の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $1.31
    $1.31
    10
    $1.12
    $11.20
    100
    $0.86
    $86.10
    500
    $0.76
    $380.50
    1000
    $0.60
    $600.00
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
    皮切りに
    最新の製品
    Top