NE85633-T1B-A

Product Attribute

Attribute Value

Manufacturer:

CEL

Product Category:

RF Bipolar Transistors

RoHS:

Y

Transistor Type:

Bipolar

Technology:

Si

Transistor Polarity:

NPN

Collector- Emitter Voltage VCEO Max:

12 V

Emitter- Base Voltage VEBO:

3 V

Continuous Collector Current:

0.1 A

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Configuration:

Single

Mounting Style:

SMD/SMT

Package / Case:

SOT-23-3

Packaging:

Reel

DC Current Gain hFE Max:

250

Height:

1.1 mm

Length:

2.9 mm

Operating Frequency:

1 GHz

Type:

RF Bipolar Small Signal

Width:

1.5 mm

Brand:

CEL

Gain Bandwidth Product fT:

7 GHz

Pd - Power Dissipation:

200 mW (1/5 W)

Product Type:

RF Bipolar Transistors

Factory Pack Quantity:

3000

Subcategory:

Transistors

Part # Aliases:

2SC3356-T1B-A

Unit Weight:

0.000282 oz

Tags

NE85633-T1B, NE85633-T, NE85633, NE8563, NE856, NE85, NE8