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AS4C32M16D1-5BANTR

AS4C32M16D1-5BANTR
Mfr. #:
AS4C32M16D1-5BANTR
Manufacturer:
Alliance Memory
Description:
DRAM 512M 2.5V 200MHz 32Mx16 DDR1 A-Temp
Lifecycle:
New from this manufacturer.
Datasheet:
AS4C32M16D1-5BANTR Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
AS4C32M16D1-5BANTR more Information
Product Attribute
Attribute Value
Manufacturer:
Alliance Memory
Product Category:
DRAM
RoHS:
Y
Type:
SDRAM - DDR1
Data Bus Width:
16 bit
Organization:
32 M x 16
Package / Case:
FBGA-60
Memory Size:
512 Mbit
Maximum Clock Frequency:
200 MHz
Access Time:
0.7 ns
Supply Voltage - Max:
2.7 V
Supply Voltage - Min:
2.3 V
Supply Current - Max:
108 mA
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 105 C
Series:
AS4C32M16D1
Packaging:
Reel
Brand:
Alliance Memory
Mounting Style:
SMD/SMT
Moisture Sensitive:
Yes
Product Type:
DRAM
Factory Pack Quantity:
2500
Subcategory:
Memory & Data Storage
Tags
AS4C32M16D1-5B, AS4C32M16D1-5, AS4C32M16D1, AS4C32M16D, AS4C32M1, AS4C3, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
DDR1 Synchronous DRAM
Alliance Memory DDR1 Synchronous DRAM is a high-speed CMOS double data rate synchronous DRAM. It is internally configured with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK. Read and write accesses to the SDRAM are burst oriented. The Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
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Availability
Stock:
Available
On Order:
2000
Enter Quantity:
Current price of AS4C32M16D1-5BANTR is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
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