UJ3D1205TS

UJ3D1205TS
Mfr. #:
UJ3D1205TS
メーカー:
UnitedSiC
説明:
Schottky Diodes & Rectifiers 1200V/5A SiC SCHOTTKY DIODE G3
ライフサイクル:
メーカー新製品
データシート:
UJ3D1205TS データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
UJ3D1205TS 詳しくは
製品属性
属性値
メーカー:
UnitedSiC
製品カテゴリ:
ショットキーダイオードと整流器
JBoss:
Y
製品:
ショットキーシリコンカーバイドダイオード
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-220-2
場合-順電流:
5 A
Vrrm-繰り返し逆電圧:
1200 V
Vf-順方向電圧:
1.4 V
Ifsm-順方向サージ電流:
70 A
構成:
独身
テクノロジー:
SiC
Ir-逆電流:
40 uA
最低動作温度:
- 55 C
最高作動温度:
+ 175 C
シリーズ:
UJ3D
資格:
AEC-Q101
包装:
チューブ
ブランド:
UnitedSiC
Pd-消費電力:
136 W
製品タイプ:
ショットキーダイオードと整流器
ファクトリーパックの数量:
50
サブカテゴリ:
ダイオードと整流器
Vr-逆電圧:
1200 V
Tags
UJ3D120, UJ3D1, UJ3D, UJ3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SiC Cascodes
UnitedSiC SiC Cascodes are the 3rd generation gate drive SiC devices that are a combination of high-performance SiC JFETs and cascode optimized MOSFETs. These SiC Cascodes are the enhancement-mode power switches formed by a high-voltage SiC depletion-mode JFET and a low-voltage silicon MOSFET connected in series. The SiC Cascodes offer the best performance for the intrinsic diode forward drop (VSD) and recovery charge (QRR). These devices deliver ultra-low gate charge but also the best reverse recovery characteristics of any devices of similar ratings. 
UJ3D Series 650V & 1200V SiC Schottky Diodes
UnitedSiC UJ3D Series 650V and 1200V (Silicon-Carbide) Schottky Diodes are designed to take advantage of of SiC's superior physical characteristics over standard silicon, with 4 times better dynamic characteristics and 15% less forward voltage (VF).  With zero reverse recovery charge and a high maximum junction temperature of 175°C, these devices are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. 
画像 モデル 説明
UJ3N120035K3S

Mfr.#: UJ3N120035K3S

OMO.#: OMO-UJ3N120035K3S

JFET 35m? - 1200V SiC Normally-On JFET
NTHL080N120SC1

Mfr.#: NTHL080N120SC1

OMO.#: OMO-NTHL080N120SC1

MOSFET SIC MOS 80MW 1200V
SCT10N120

Mfr.#: SCT10N120

OMO.#: OMO-SCT10N120

MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
STPSC10H12CWL

Mfr.#: STPSC10H12CWL

OMO.#: OMO-STPSC10H12CWL

Schottky Diodes & Rectifiers 1200V Power Schottky Silicon Carbide diode
C4D05120A

Mfr.#: C4D05120A

OMO.#: OMO-C4D05120A

Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 5A
ATTINY45-20PU

Mfr.#: ATTINY45-20PU

OMO.#: OMO-ATTINY45-20PU

8-bit Microcontrollers - MCU 4kB Flash 0.256kB EEPROM 6 I/O Pins
507302B00000G

Mfr.#: 507302B00000G

OMO.#: OMO-507302B00000G-AAVID-THERMALLOY

Heat Sink Passive TO-220 Screw Mount 24C/W Black Anodized
DVK-BL652-SA

Mfr.#: DVK-BL652-SA

OMO.#: OMO-DVK-BL652-SA-LAIRD-TECHNOLOGIES

DEV KIT,W/ BL652-SA
STPSC10H12CWL

Mfr.#: STPSC10H12CWL

OMO.#: OMO-STPSC10H12CWL-STMICROELECTRONICS

DIODE ARRAY SCHOTTKY 1200V TO247
SCT10N120

Mfr.#: SCT10N120

OMO.#: OMO-SCT10N120-STMICROELECTRONICS

MOSFET N-CH 1.2KV TO247-3
可用性
ストック:
53
注文中:
2036
数量を入力してください:
UJ3D1205TSの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$5.96
$5.96
10
$5.63
$56.30
25
$5.07
$126.75
50
$4.75
$237.50
100
$4.62
$462.00
250
$4.17
$1 042.50
500
$3.74
$1 870.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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