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IRFSL4010PBF

IRFSL4010PBF
Mfr. #:
IRFSL4010PBF
メーカー:
Infineon Technologies
説明:
MOSFET MOSFT 100V 180A 4.7mOhm 143nC
ライフサイクル:
メーカー新製品
データシート:
IRFSL4010PBF データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFSL4010PBF DatasheetIRFSL4010PBF Datasheet (P4-P6)IRFSL4010PBF Datasheet (P7-P9)IRFSL4010PBF Datasheet (P10)
ECAD Model:
製品属性
属性値
メーカー：
インフィニオン
製品カテゴリ：
MOSFET
JBoss：
Y
テクノロジー：
Si
取り付けスタイル：
スルーホール
パッケージ/ケース：
TO-262-3
チャネル数：
1 Channel
トランジスタの極性：
Nチャネル
Vds-ドレイン-ソース間降伏電圧：
100 V
Id-連続ドレイン電流：
180 A
Rds On-ドレイン-ソース抵抗：
3.9 mOhms
Vgs-ゲート-ソース間電圧：
20 V
Qg-ゲートチャージ：
143 nC
Pd-消費電力：
375 W
構成：
独身
包装：
チューブ
高さ：
9.45 mm
長さ：
10.2 mm
トランジスタタイプ：
1 N-Channel
幅：
4.5 mm
ブランド：
インフィニオンテクノロジーズ
製品タイプ：
MOSFET
ファクトリーパックの数量：
1000
サブカテゴリ：
MOSFET
パーツ番号エイリアス：
SP001567760
単位重量：
0.084199 oz
Tags
IRFSL4, IRFSL, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 4.7 mOhm 143 nC HEXFET® Power Mosfet - TO-262-3
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; On Resistance Rds(On):0.0039Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Msl:- Rohs Compliant: Yes
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 180 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 3.9 / Gate-Source Voltage V = 20 / Fall Time ns = 77 / Rise Time ns = 86 / Turn-OFF Delay Time ns = 100 / Turn-ON Delay Time ns = 21 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-262 / Pins = 3 / Mounting Type = Through Hole / MSL = Level-1 / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 375
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 3.3Milliohms;ID 170A;TO-262;PD 300W;VF 1.3V
***ure Electronics
Single N-Channel 75 V 4.1 mOhm 120 nC HEXFET® Power Mosfet - TO-262-3
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***nell
MOSFET, N-CH, 75V, 170A, TO-262-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 170A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; P
***ure Electronics
Single N-Channel 100 V 4.5 mOhm 130 nC HEXFET® Power Mosfet - TO-262-3
***Yang
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-262 Tube - Rail/Tube
***(Formerly Allied Electronics)
MOSFET, 100V, 180A, 4.3 MOHM, 87 NC QG,TO-262
*** Electronic Components
MOSFET MOSFT 100V 180A 4.3mOhm 87nC
***ineon
Benefits: RoHS Compliant; Logic Level
***S
French Electronic Distributor since 1988
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; On Resistance Rds(On):0.0034Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Msl:- Rohs Compliant: Yes
***Yang
Transistor MOSFET N-Channel 100V 164A 3-Pin I2PAK Tube - Rail/Tube
***ure Electronics
N-Channel 100 V 4.5 mOhm Through Hole POWERTRENCH MOSFET - I2PAK (TO-262)
***emi
PowerTrench® MOSFET, N-Channel, 100V, 164A, 4.5mΩ
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:75V; Continuous Drain Current, Id:230A; On Resistance, Rds(on):3mohm; Rds(on) Test Voltage, Vgs:3V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes
***roFlash
Transistor, mosfet, n-Channel, 100V V(Br)Dss, 56A I(D), to-262Aa Rohs Compliant: Yes
***emi
N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ
***r Electronics
Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ark
MOSFET, N-CH, 100V, 56A, TO-262AA; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:56A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
***emi
PowerTrench® MOSFET, N-Channel, 100V, 57A, 16mΩ
***r Electronics
Power Field-Effect Transistor, 57A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
モデル メーカー 説明 ストック 価格
IRFSL4010PBF
DISTI # V99:2348_13890792		Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-262 Tube448
  • 1000:$1.5507
  • 500:$1.7037
  • 250:$1.9537
  • 100:$2.0116
  • 10:$2.3268
  • 1:$2.6765
IRFSL4010PBF
DISTI # IRFSL4010PBF-ND		Infineon Technologies AGMOSFET N-CH 100V 180A TO-262
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1000:$1.7325
  • 500:$2.0543
  • 100:$2.5369
  • 10:$3.0940
  • 1:$3.4700
IRFSL4010PBF
DISTI # 30702600		Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-262 Tube1008
  • 1000:$1.6676
  • 500:$1.7856
  • 250:$1.9968
  • 100:$2.1024
  • 10:$2.4288
IRFSL4010PBF
DISTI # 30730998		Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-262 Tube448
  • 6:$1.3685
IRFSL4010PBF
DISTI # 30605832		Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-262 Tube50
  • 8:$3.5125
IRFSL4010PBF
DISTI # IRFSL4010PBF		Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-262 Tube - Rail/Tube (Alt: IRFSL4010PBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$1.2968
  • 2000:$1.2500
  • 4000:$1.2048
  • 6000:$1.1643
  • 10000:$1.1436
IRFSL4010PBF
DISTI # 91Y4712		Infineon Technologies AGMOSFET, N-CH, 100V, 180A, TO-262-3,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0039ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes313
  • 500:$1.8800
  • 250:$2.1000
  • 100:$2.2100
  • 50:$2.3300
  • 25:$2.4400
  • 10:$2.5600
  • 1:$3.0000
IRFSL4010PBF.
DISTI # 27AC6833		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0039ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:375W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 500:$1.8800
  • 250:$2.1000
  • 100:$2.2100
  • 50:$2.3300
  • 25:$2.4400
  • 10:$2.5600
  • 1:$3.0000
IRFSL4010PBF
DISTI # 70019763		Infineon Technologies AGIRFSL4010PBF N-channel MOSFET Transistor,180 A,100 V,3-Pin TO-262
RoHS: Compliant		0
  • 2:$5.3200
IRFSL4010PBF
DISTI # 942-IRFSL4010PBF		Infineon Technologies AGMOSFET MOSFT 100V 180A 4.7mOhm 143nC
RoHS: Compliant		464
  • 1:$2.9700
  • 10:$2.5300
  • 100:$2.1900
  • 250:$2.0800
  • 500:$1.8600
  • 1000:$1.6100
IRFSL4010PBFInfineon Technologies AGSingle N-Channel 100 V 4.7 mOhm 143 nC HEXFET Power Mosfet - TO-262-3
RoHS: Compliant		50Tube
  • 5:$2.1800
  • 25:$1.7700
  • 50:$1.7000
  • 100:$1.6300
  • 250:$1.5300
IRFSL4010PBF
DISTI # 8274111P		Infineon Technologies AGHEXFET N-CH MOSFET 180A 100V TO-262, TU90
  • 500:£1.8950
  • 250:£2.1150
  • 100:£2.2250
  • 50:£2.5700
IRFSL4010PBF
DISTI # 2580031		Infineon Technologies AGMOSFET, N-CH, 100V, 180A, TO-262-3
RoHS: Compliant		373
  • 500:£2.4400
  • 250:£2.7200
  • 100:£2.8800
  • 10:£3.3200
  • 1:£4.3100
IRFSL4010PBF
DISTI # 2580031		Infineon Technologies AGMOSFET, N-CH, 100V, 180A, TO-262-3
RoHS: Compliant		313
  • 10:$3.8900
  • 1:$4.5700
画像 モデル 説明
BAV19WS-TP

Mfr.#: BAV19WS-TP

OMO.#: OMO-BAV19WS-TP

 Diodes - General Purpose, Power, Switching 250mA 100V
IRLSL4030PBF

Mfr.#: IRLSL4030PBF

OMO.#: OMO-IRLSL4030PBF

 MOSFET MOSFT 100V 180A 4.3mOhm 87nC
NSR0520V2T1G

Mfr.#: NSR0520V2T1G

OMO.#: OMO-NSR0520V2T1G

 Schottky Diodes & Rectifiers 20V SCHOTTKY DIO
BAT41KFILM

Mfr.#: BAT41KFILM

OMO.#: OMO-BAT41KFILM

 Schottky Diodes & Rectifiers schottky diode
C2012X5R1H475K125AB

Mfr.#: C2012X5R1H475K125AB

OMO.#: OMO-C2012X5R1H475K125AB

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 50V 4.7uF X5R 10% T: 1.25mm
90131-0762

Mfr.#: 90131-0762

OMO.#: OMO-90131-0762-410

 Headers & Wire Housings 2.54MM CGRIDIII HDR 4P VERT DR SEL AU
BAV19WS-TP

Mfr.#: BAV19WS-TP

OMO.#: OMO-BAV19WS-TP-MICRO-COMMERCIAL-COMPONENTS

 Diodes - General Purpose, Power, Switching 250mA 100V
BAT41KFILM

Mfr.#: BAT41KFILM

OMO.#: OMO-BAT41KFILM-STMICROELECTRONICS

 DIODE SCHOTTKY 100V 200MA SOD523
LBC3225T101KR

Mfr.#: LBC3225T101KR

OMO.#: OMO-LBC3225T101KR-TAIYO-YUDEN

 Fixed Inductors INDCTR HI CUR WND 1210 100uH 10%
C2012X5R1H475K125AB

Mfr.#: C2012X5R1H475K125AB

OMO.#: OMO-C2012X5R1H475K125AB-TDK

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 4.7uF 50volts X5R 10%
可用性
ストック:
Available
注文中:
1984
数量を入力してください:
IRFSL4010PBFの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格（USD）
量
単価
小計金額
1
$2.97
$2.97
10
$2.53
$25.30
100
$2.19
$219.00
250
$2.08
$520.00
500
$1.86
$930.00
1000
$1.61
$1 610.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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