2N5401RLRA

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

N

Mounting Style:

Through Hole

Package / Case:

TO-92-3

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

150 V

Collector- Base Voltage VCBO:

160 V

Emitter- Base Voltage VEBO:

5 V

Collector-Emitter Saturation Voltage:

0.5 V

Maximum DC Collector Current:

0.6 A

Gain Bandwidth Product fT:

300 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Height:

5.33 mm

Length:

5.2 mm

Packaging:

Reel

Width:

4.19 mm

Brand:

ON Semiconductor

Continuous Collector Current:

0.6 A

DC Collector/Base Gain hfe Min:

50

Pd - Power Dissipation:

625 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

2000

Subcategory:

Transistors

Tags

2N5401RLR, 2N5401RL, 2N5401R, 2N5401, 2N540, 2N54, 2N5