IXTT440N04T4HV

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-268-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

40 V

Id - Continuous Drain Current:

440 A

Rds On - Drain-Source Resistance:

1.25 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

15 V

Qg - Gate Charge:

480 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

940 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

HiPerFET

Packaging:

Tube

Transistor Type:

1 N-Channel

Brand:

IXYS

Forward Transconductance - Min:

110 S

Fall Time:

74 ns

Product Type:

MOSFET

Rise Time:

250 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

120 ns

Typical Turn-On Delay Time:

44 ns

Unit Weight:

0.141096 oz

Tags

IXTT4, IXTT, IXT