IXTH80N20L

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

200 V

Id - Continuous Drain Current:

80 A

Rds On - Drain-Source Resistance:

32 mOhms

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

180 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

520 W

Channel Mode:

Enhancement

Packaging:

Tube

Series:

IXTH80N20

Brand:

IXYS

Forward Transconductance - Min:

30 S

Fall Time:

29 ns

Product Type:

MOSFET

Rise Time:

44 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

72 ns

Typical Turn-On Delay Time:

29 ns

Unit Weight:

0.056438 oz

Tags

IXTH80, IXTH8, IXTH, IXT