BSM75GB120DN2

BSM75GB120DN2
Mfr. #:
BSM75GB120DN2
Manufacturer:
Infineon Technologies
Description:
IGBT Modules 1200V 75A DUAL
Lifecycle:
New from this manufacturer.
Datasheet:
BSM75GB120DN2 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
IGBT Modules
RoHS:
N
Product:
IGBT Silicon Modules
Configuration:
Half Bridge
Collector- Emitter Voltage VCEO Max:
1200 V
Collector-Emitter Saturation Voltage:
2.5 V
Continuous Collector Current at 25 C:
105 A
Gate-Emitter Leakage Current:
320 nA
Pd - Power Dissipation:
625 W
Package / Case:
Half Bridge1
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Packaging:
Tray
Height:
30.5 mm
Length:
94 mm
Width:
34 mm
Brand:
Infineon Technologies
Mounting Style:
Chassis Mount
Maximum Gate Emitter Voltage:
20 V
Product Type:
IGBT Modules
Factory Pack Quantity:
10
Subcategory:
IGBTs
Part # Aliases:
BSM75GB120DN2HOSA1 SP000095923
Tags
BSM75GB120DN2, BSM75GB120DN, BSM75GB120, BSM75GB12, BSM75GB1, BSM75GB, BSM75G, BSM75, BSM7, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
IGBT - Standard Modules 1200V 75A DUAL
***omponent
BSM75GB120DN2 IGBT power transistor module
***trelec
IGBT Modules1200 V
Part # Mfg. Description Stock Price
BSM75GB120DN2HOSA1
DISTI # C1S322000617003
Infineon Technologies AGIGBT Chip230
  • 50:$82.1000
  • 25:$88.1000
  • 10:$95.0000
  • 5:$124.0000
  • 1:$135.0000
BSM75GB120DN2HOSA1
DISTI # BSM75GB120DN2HOSA1-ND
Infineon Technologies AGIGBT 2 MED POWER 34MM-1
RoHS: Compliant
Min Qty: 10
Container: Tray
Limited Supply - Call
  • 10:$87.1650
BSM75GB120DN2HOSA1
DISTI # BSM75GB120DN2HOSA1
Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 75A nom 690W - Trays (Alt: BSM75GB120DN2HOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray
Americas - 0
  • 10:$81.2900
  • 20:$78.3900
  • 40:$75.4900
  • 60:$72.9900
  • 100:$71.6900
BSM75GB120DN2_E3223C-SEInfineon Technologies AG 
RoHS: Not Compliant
38
  • 1000:$92.8700
  • 500:$97.7600
  • 100:$101.7700
  • 25:$106.1400
  • 1:$114.3000
BSM75GB120DN2
DISTI # 641-BSM75GB120DN2
Infineon Technologies AGIGBT Modules 1200V 75A DUAL
RoHS: Not compliant
2
  • 1:$90.3600
  • 5:$88.7000
  • 10:$84.7100
  • 25:$81.8800
  • 100:$76.2500
BSM75GB120DN2_E3223c-Se
DISTI # 641-75GB120DN23223SE
Infineon Technologies AGIGBT Modules IGBT 1200V 75A1
  • 1:$121.5500
  • 5:$119.1600
  • 10:$113.6000
  • 25:$111.2200
BSM75GB120DN2SiemensInsulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel
RoHS: Not Compliant
Europe - 6
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    OMO.#: OMO-PR03000201003JAC00-VISHAY

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    Voltage References 5V Prec Micropwr LDO Low VRef
    Availability
    Stock:
    Available
    On Order:
    1992
    Enter Quantity:
    Current price of BSM75GB120DN2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $90.36
    $90.36
    5
    $88.70
    $443.50
    10
    $84.71
    $847.10
    25
    $81.88
    $2 047.00
    100
    $76.25
    $7 625.00
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