MRF8372LF

Product Attribute

Attribute Value

Manufacturer:

Advanced Semiconductor, Inc.

Product Category:

RF Bipolar Transistors

RoHS:

Y

Transistor Type:

Bipolar Power

Technology:

Si

Transistor Polarity:

NPN

DC Collector/Base Gain hfe Min:

30

Collector- Emitter Voltage VCEO Max:

16 V

Emitter- Base Voltage VEBO:

3 V

Continuous Collector Current:

200 mA

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 200 C

Mounting Style:

SMD/SMT

Package / Case:

SOIC-8

Packaging:

Tray

Operating Frequency:

800 MHz

Type:

RF Bipolar Power

Brand:

Advanced Semiconductor, Inc.

Pd - Power Dissipation:

2.2 W

Product Type:

RF Bipolar Transistors

Factory Pack Quantity:

1

Subcategory:

Transistors

Unit Weight:

0.019048 oz

Tags

MRF8372L, MRF8372, MRF837, MRF83, MRF8, MRF