FQAF19N60

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-3PN-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

11.2 A

Rds On - Drain-Source Resistance:

380 mOhms

Vgs - Gate-Source Voltage:

30 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

120 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

20.1 mm

Length:

16.2 mm

Transistor Type:

1 N-Channel

Type:

MOSFET

Width:

5 mm

Brand:

ON Semiconductor / Fairchild

Forward Transconductance - Min:

12 S

Fall Time:

135 ns

Product Type:

MOSFET

Rise Time:

210 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

150 ns

Typical Turn-On Delay Time:

65 ns

Unit Weight:

0.000198 oz

Tags

FQAF19, FQAF1, FQAF, FQA