DMN3016LFDE-7

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

U-DFN2020-E-6

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

10 A

Rds On - Drain-Source Resistance:

16 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.4 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

25.1 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.02 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

0.6 mm

Length:

2 mm

Product:

Enhancement Mode MOSFET

Series:

DMN3016

Transistor Type:

1 N-Channel

Type:

Enhancement Mode MOSFET

Width:

2 mm

Brand:

Diodes Incorporated

Forward Transconductance - Min:

-

Fall Time:

5.6 ns

Product Type:

MOSFET

Rise Time:

16.5 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

26.1 ns

Typical Turn-On Delay Time:

4.8 ns

Tags

DMN3016LFDE, DMN3016LFD, DMN3016LF, DMN3016, DMN301, DMN30, DMN3, DMN