2N3706

Product Attribute

Attribute Value

Manufacturer:

Central Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

Through Hole

Package / Case:

TO-92-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

20 V

Collector- Base Voltage VCBO:

40 V

Emitter- Base Voltage VEBO:

- 5 V

Maximum DC Collector Current:

0.8 A

Gain Bandwidth Product fT:

100 MHz

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Series:

2N3706

DC Current Gain hFE Max:

600

Height:

5.33 mm

Length:

5.21 mm

Packaging:

Bulk

Width:

4.19 mm

Brand:

Central Semiconductor

DC Collector/Base Gain hfe Min:

30

Pd - Power Dissipation:

625 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

2500

Subcategory:

Transistors

Part # Aliases:

2N3706 PBFREE

Unit Weight:

0.016000 oz

Tags

2N370, 2N37, 2N3