S25FL128SAGMFB010

Mfr. #:: S25FL128SAGMFB010
メーカー:: Cypress Semiconductor
説明:: Flash Memory 128-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, SO3016 IN TRAY PACKING
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詳しくは:: S25FL128SAGMFB010 詳しくは S25FL128SAGMFB010 Product Details

製品属性
属性値

メーカー: サイプレスセミコンダクター株式会社

製品カテゴリ: メモリー

シリーズ: FL-S

包装: トレイ代替包装

取り付けスタイル: SMD / SMT

動作-温度-範囲: - 40 C to + 105 C

パッケージ-ケース: SO-16

作動温度: -40°C ~ 105°C (TA)

インターフェース: SPIシリアル

電圧供給: 2.7 V ~ 3.6 V

サプライヤー-デバイス-パッケージ: 16-SO

メモリー容量: 128M (16M x 8)

メモリタイプ: フラッシュ-NOR

スピード: 133MHz

建築: MirrorBit Eclipse

フォーマット-メモリ: 閃光

標準: Common Flash Interface（CFI）

インターフェイスタイプ: SPI

組織: 16 M x 8

供給-電流-最大: 100 mA

データバス幅: 8 bit

供給-電圧-最大: 3.6 V

供給-電圧-最小: 2.7 V

最大クロック周波数: 133 MHz

タイミングタイプ: 同期

Tags: S25FL128SAGMFB01, S25FL128SAGMFB0, S25FL128SAGMFB, S25FL128SAGM, S25FL128SAG, S25FL128SA, S25FL128S, S25FL128, S25FL12, S25FL1, S25FL, S25F, S25

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

S25FL128SAGMFB010 説明

***et: 128-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (S

***i-Key: IC FLASH 128M SPI 133MHZ 16SOIC

S25FL128SAGMFB010 詳しくは

S25FL128S NOR Flash Memory Devices: Cypress S25FL128S FL-S NOR is a 2.7V - 3.6V / 1.65V - 3.6V VIO Volt Flash Non-volatile Memory Device using 65nm MirrorBit technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single bit serial input and output (Single I/O or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. Cypress S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.

S25FL MirroBit Flash Non-Volatile Memory: Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.

S25FLxS FL-S NOR Flash Memory Devices: Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.

Market price

モデル	メーカー	説明	ストック	価格
S25FL128SAGMFB010 DISTI # S25FL128SAGMFB010-ND	Cypress Semiconductor	IC FLASH 128M SPI 133MHZ 16SOIC RoHS: Compliant Min Qty: 240 Container: Tray	Temporarily Out of Stock	240:$3.2924
S25FL128SAGMFB010 DISTI # 727-S25FL128SAGMF010	Cypress Semiconductor	NOR Flash Nor RoHS: Compliant	0	1:$5.4500 10:$4.8800 25:$4.3900 100:$4.0000

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S25FL128SAGMFB010

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes