MR2A08AMYS35R

Mfr. #:: MR2A08AMYS35R
メーカー:: Everspin Technologies
説明:: NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
ライフサイクル:: メーカー新製品
データシート:: MR2A08AMYS35R データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:: MR2A08AMYS35R 詳しくは

製品属性
属性値

メーカー: Everspin Technologies Inc.

製品カテゴリ: メモリー

シリーズ: Automotive, AEC-Q100

包装: テープ＆リール（TR）代替パッケージ

取り付けスタイル: SMD / SMT

パッケージ-ケース: TSOP-44

作動温度: -40°C ~ 125°C (TA)

インターフェース: 平行

電圧供給: 3 V ~ 3.6 V

サプライヤー-デバイス-パッケージ: 44-TSOP2 (10.2x18.4)

メモリー容量: 4M (512K x 8)

メモリタイプ: MRAM（磁気抵抗RAM）

スピード: 35ns

アクセス時間: 35 ns

フォーマット-メモリ: 羊

最高作動温度: + 125 C

最低作動温度: - 40 C

動作-供給-電流: 50 mA

インターフェイスタイプ: 平行

組織: 512 k x 8

データバス幅: 8 bit

供給-電圧-最大: 3.6 V

供給-電圧-最小: 3 V

Tags: MR2A08AM, MR2A0, MR2A, MR2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MR2A08AMYS35R 評価とレビュー

E**l

In karaganda the parcel was less than a month. Thanks to the seller and all the participants of the delivery.

2019-05-07

M***o

A + + + + excellent seller, i will do business again with eiechip official store

2019-08-29

M***n

The screen works, everything is fine!!

2019-05-23

A***v

Shipping 29 days. The quality is excellent.

2019-07-10

MR2A08AMYS35R 説明

***i-Key: IC RAM 4M PARALLEL 44TSOP2

MR2A08AMYS35R 詳しくは

MR2A08A / MR2A16A 4Mb Parallel MRAM: Everspin Technologies MR2A08A and MR2A16A 4Mb Parallel MRAM devices offer SRAM compatible 35ns read/write timing with unlimited endurance. The MR2A08A series products are 4,194,304-bit Magnetoresistive Random Access Memory (MRAM) devices organized as 524,288 words of 8 bits.

Magnetoresistive Random Access Memory (MRAM): Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

Everspin MRAM

Market price

モデル	メーカー	説明	ストック	価格
MR2A08AMYS35R DISTI # MR2A08AMYS35R-ND	Everspin Technologies	IC RAM 4M PARALLEL 44TSOP2 RoHS: Compliant Min Qty: 1500 Container: Tape & Reel (TR)	Temporarily Out of Stock	1500:$21.3997
MR2A08AMYS35 DISTI # 936-MR2A08AMYS35	Everspin Technologies	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM RoHS: Compliant	253	1:$28.0200 5:$27.2000 10:$26.0900 25:$25.8100 50:$25.1700 100:$22.1000 250:$21.3500
MR2A08AMYS35R DISTI # 936-MR2A08AMYS35R	Everspin Technologies	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM RoHS: Compliant	0	1500:$21.4000

関連製品

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	Mfr.#: MR2A08AMYS35 OMO.#: OMO-MR2A08AMYS35	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
	Mfr.#: MR2A08AMA35 OMO.#: OMO-MR2A08AMA35	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
	Mfr.#: MR2A08ACMA35R OMO.#: OMO-MR2A08ACMA35R	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
	Mfr.#: MR2A08ACYS35R OMO.#: OMO-MR2A08ACYS35R	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
	Mfr.#: MR2A08AYS35R OMO.#: OMO-MR2A08AYS35R	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
	Mfr.#: MR2A08ACYS35 OMO.#: OMO-MR2A08ACYS35	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
	Mfr.#: MR2A08AYS35R OMO.#: OMO-MR2A08AYS35R-EVERSPIN-TECHNOLOGIES	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
	Mfr.#: MR2A08AMYS35 OMO.#: OMO-MR2A08AMYS35-EVERSPIN-TECHNOLOGIES	NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
	Mfr.#: MR2A08ACMA35 OMO.#: OMO-MR2A08ACMA35-EVERSPIN-TECHNOLOGIES	IC RAM 4M PARALLEL 48FBGA