STQ1HN60K3-AP

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-92-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

400 mA

Rds On - Drain-Source Resistance:

6.7 Ohms

Vgs th - Gate-Source Threshold Voltage:

3.75 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

9.5 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

3 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

SuperMESH

Packaging:

Ammo Pack

Series:

STQ1HN60K3-AP

Transistor Type:

1 N-Channel

Brand:

STMicroelectronics

Fall Time:

31 ns

Product Type:

MOSFET

Rise Time:

10 ns

Factory Pack Quantity:

2000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

23 ns

Typical Turn-On Delay Time:

7 ns

Unit Weight:

0.007760 oz

Tags

STQ1H, STQ1, STQ