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APT60GT60BRG

APT60GT60BRG
Mfr. #:
APT60GT60BRG
Manufacturer:
Microchip / Microsemi
Description:
IGBT Transistors FG, IGBT, 600V, 60A, TO-247, RoHS
Lifecycle:
New from this manufacturer.
Datasheet:
APT60GT60BRG Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT60GT60BRG DatasheetAPT60GT60BRG Datasheet (P4-P5)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Microchip
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Packaging:
Tube
Brand:
Microchip / Microsemi
Product Type:
IGBT Transistors
Factory Pack Quantity:
1
Subcategory:
IGBTs
Tags
APT60GT6, APT60GT, APT60G, APT60, APT6, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247
*** Stop Electro
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247
***th Star Micro
Insulated Gate Bipolar Transistor - NPT Standard Speed
***aconductors
Insulated Gate Bipolar Transistors
***p One Stop
Trans IGBT Chip N-CH 600V 100A 333000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
IKW50N60H3 Series 600 V 100 A Trench Field Stop IGBT - PG-TO-247-3
***Parts
IGBTs - Single, Transistors N-Channel, PG-TO247-3 100A 600V 333W Through Hole
***ineon SCT
600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
***nell
IGBT, SINGLE, 600V, 100A, TO-247-3; DC Collector Current: 100A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 333W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of
***ineon
Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications
***ical
Trans IGBT Chip N-CH 600V 100A 333000mW 3-Pin(3+Tab) TO-247 Tube
***ineon SCT
High speed 600 V, 50 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses, PG-TO247-3, RoHS
***ment14 APAC
IGBT,600V,50A,TO247; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2.3V; Power Dissipation Pd:333W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:333W
***ineon
Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications
***ical
Trans IGBT Chip N-CH 600V 100A 417000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD
*** Electronics
ON SEMICONDUCTOR NGTB50N60S1WG IGBT Single Transistor, 100 A, 1.8 V, 417 W, 600 V, TO-247, 3 Pins
***ical
Trans IGBT Chip N=-CH 600V 100A 595000mW 3-Pin(3+Tab) TO-247 Tube
***el Electronic
RES SMD 23.7K OHM 1% 1/8W 0805
***r Electronics
Insulated Gate Bipolar Transistor
***ical
Trans IGBT Chip N-CH 600V 100A 463000mW 3-Pin(3+Tab) TO-247 Tube
*** Stop Electro
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD
***rochip
IGBT PT MOS 7 Combi 600 V 30 A TO-247
***ure Electronics
IGBT PT 600 V 100 A 463 W Through Hole TO-247 [B]
***ical
Trans IGBT Chip N-CH 600V 100A 360000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
50 A, 600 V field stop trench gate IGBT with Ultrafast diode
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247
***el Electronic
IGBT Transistors 50A 600V FST IGBT Ultrafast Diode
***ponent Stockers USA
100 A 600 V N-CHANNEL IGBT TO-247
***et
STMICROELECTRONICS STGW50H60DF IGBTS
Part # Mfg. Description Stock Price
APT60GT60BRG
DISTI # APT60GT60BRG-ND		Microsemi CorporationIGBT 600V 100A 500W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		3885In Stock
  • 510:$7.6560
  • 270:$8.1840
  • 120:$8.9761
  • 30:$9.7680
  • 10:$10.5600
  • 1:$11.6200
APT60GT60BRG
DISTI # 494-APT60GT60BRG		Microsemi CorporationIGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency - Single
RoHS: Compliant		82
  • 1:$12.3200
  • 10:$11.0900
  • 25:$10.1000
  • 50:$9.4100
  • 100:$9.1200
  • 250:$8.3200
  • 500:$7.6000
  • 1000:$6.4300
APT60GT60BRG
DISTI # APT60GT60BRG		Microsemi CorporationPOWER IGBT TRANSISTOR
RoHS: Compliant		0
  • 51:$6.4000
  • 100:$6.2400
  • 500:$6.1600
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 Aluminum Electrolytic Capacitors - Axial Leaded 47uF 25V 20% Axial
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Mfr.#: 381LQ331M450K452

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Availability
Stock:
77
On Order:
2060
Enter Quantity:
Current price of APT60GT60BRG is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$12.32
$12.32
10
$11.09
$110.90
25
$10.10
$252.50
50
$9.41
$470.50
100
$9.12
$912.00
250
$8.32
$2 080.00
500
$7.60
$3 800.00
1000
$6.43
$6 430.00
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