KSE13003H3ASTU

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

Through Hole

Package / Case:

TO-126-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

400 V

Collector- Base Voltage VCBO:

700 V

Emitter- Base Voltage VEBO:

9 V

Maximum DC Collector Current:

1.5 A

Gain Bandwidth Product fT:

4 MHz

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Series:

KSE13003

DC Current Gain hFE Max:

19

Height:

11 mm

Length:

8 mm

Packaging:

Tube

Width:

3.25 mm

Brand:

ON Semiconductor / Fairchild

DC Collector/Base Gain hfe Min:

19

Pd - Power Dissipation:

20000 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

60

Subcategory:

Transistors

Unit Weight:

0.026843 oz

Tags

KSE13003H, KSE13003, KSE13, KSE1, KSE