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IRF8313PBF

IRF8313PBF
Mfr. #:
IRF8313PBF
Manufacturer:
Infineon Technologies
Description:
Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
Lifecycle:
New from this manufacturer.
Datasheet:
IRF8313PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
Infineon Technologies
Product Category
FETs - Arrays
Series
-
Packaging
Tube Alternate Packaging
Unit-Weight
0.019048 oz
Mounting-Style
SMD/SMT
Package-Case
8-SOIC (0.154", 3.90mm Width)
Technology
Si
Operating-Temperature
-55°C ~ 175°C (TJ)
Mounting-Type
Surface Mount
Number-of-Channels
2 Channel
Supplier-Device-Package
8-SO
Configuration
Dual
FET-Type
2 N-Channel (Dual)
Power-Max
2W
Transistor-Type
2 N-Channel
Drain-to-Source-Voltage-Vdss
30V
Input-Capacitance-Ciss-Vds
760pF @ 15V
FET-Feature
Logic Level Gate
Current-Continuous-Drain-Id-25°C
9.7A
Rds-On-Max-Id-Vgs
15.5 mOhm @ 9.7A, 10V
Vgs-th-Max-Id
2.35V @ 25μA
Gate-Charge-Qg-Vgs
90nC @ 4.5V
Pd-Power-Dissipation
2 W
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
9.7 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Resistance
21.6 mOhms
Transistor-Polarity
N-Channel
Qg-Gate-Charge
6 nC
Tags
IRF8313, IRF831, IRF83, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 2 W 6 nC Hexfet Power Mosfet Surface Mount - SOIC-8
***et Europe
Transistor MOSFET Array Dual N-CH 30V 9.7A 8-Pin SOIC Tube
***ark
Dual N Channel Mosfet, 30V, 9.7A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.1A; On Resistance Rds(On):0.0155Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V
***ment14 APAC
MOSFET, DUAL N-CH 30V 9.7A SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:9.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):15.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.7A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
Part # Mfg. Description Stock Price
IRF8313PBF
DISTI # V99:2348_13891188		Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
RoHS: Compliant		182
  • 1:$0.2929
IRF8313PBF
DISTI # IRF8313PBF-ND		Infineon Technologies AGMOSFET 2N-CH 30V 9.7A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Tube		Limited Supply - Call
    IRF8313PBF..
    DISTI # 30728279    		Infineon Technologies AGIRF8313PBF..735
    • 260:$0.2969
    IRF8313PBF
    DISTI # 26198223    		Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
    RoHS: Compliant    		182
    • 25:$0.2929
    IRF8313PBF
    DISTI # IRF8313PBF    		Infineon Technologies AGTrans MOSFET N-CH 30V 9.7A 8-Pin SOIC - Rail/Tube (Alt: IRF8313PBF)
    RoHS: Compliant
    Min Qty: 3800
    Container: Tube    		Americas - 4924
      IRF8313PBF..
      DISTI # 10R3491      		Infineon Technologies AGDUAL N CHANNEL MOSFET, 30V, 9.7A, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:8.1A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V735
      • 1:$0.1930
      • 10:$0.1930
      • 100:$0.1930
      • 500:$0.1930
      • 1000:$0.1930
      • 2500:$0.1930
      • 10000:$0.1930
      IRF8313PBF
      DISTI # 942-IRF8313PBF      		Infineon Technologies AGMOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
      RoHS: Compliant      		0
        IRF8313PBFInfineon Technologies AGPower Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
        RoHS: Compliant        		1439
        • 1000:$0.2400
        • 500:$0.2500
        • 100:$0.2600
        • 25:$0.2700
        • 1:$0.2900
        IRF8313PBFInternational RectifierPower Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
        RoHS: Compliant        		5182
        • 1000:$0.2400
        • 500:$0.2500
        • 100:$0.2600
        • 25:$0.2700
        • 1:$0.2900
        IRF8313TRPBF
        DISTI # IRF8313PBF-GURT        		Infineon Technologies AG2xN-Ch 30V 9,7A 2,0W 0,0155R SO8
        RoHS: Compliant        		2600
        • 50:€0.2460
        • 100:€0.2060
        • 500:€0.1860
        • 2000:€0.1790
        IRF8313PBF
        DISTI # C1S327400167723        		Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
        RoHS: Compliant        		123
        • 50:$0.2240
        • 10:$0.3250
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        Availability
        Stock:
        Available
        On Order:
        2000
        Enter Quantity:
        Current price of IRF8313PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $0.34
        $0.34
        10
        $0.32
        $3.19
        100
        $0.30
        $30.24
        500
        $0.29
        $142.80
        1000
        $0.27
        $268.80
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