ZXTP2009ZQTA

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-89-3

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

- 40 V

Collector- Base Voltage VCBO:

- 50 V

Emitter- Base Voltage VEBO:

- 7 V

Collector-Emitter Saturation Voltage:

- 162 mV

Maximum DC Collector Current:

- 15 A

Gain Bandwidth Product fT:

152 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

DC Current Gain hFE Max:

550 at - 500 mA, - 2 V

Packaging:

Reel

Brand:

Diodes Incorporated

Continuous Collector Current:

- 5.5 A

DC Collector/Base Gain hfe Min:

200 at - 10 mA, - 2 V

Pd - Power Dissipation:

3 W

Product Type:

BJTs - Bipolar Transistors

Qualification:

AEC-Q101

Factory Pack Quantity:

1000

Subcategory:

Transistors

Unit Weight:

0.001764 oz

Tags

ZXTP200, ZXTP20, ZXTP2, ZXTP, ZXT