MJF3055G

MJF3055G
Mfr. #:
MJF3055G
メーカー:
ON Semiconductor
説明:
Bipolar Transistors - BJT 10A 90V 30W NPN
ライフサイクル:
メーカー新製品
データシート:
MJF3055G データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MJF3055G DatasheetMJF3055G Datasheet (P4-P5)
ECAD Model:
製品属性
属性値
メーカー:
オン・セミコンダクター
製品カテゴリ:
バイポーラトランジスタ-BJT
JBoss:
Y
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-220FP-3
トランジスタの極性:
NPN
構成:
独身
コレクター-エミッター電圧VCEOMax:
90 V
コレクター-ベース電圧VCBO:
90 V
エミッタ-ベース電圧VEBO:
5 V
コレクター-エミッター飽和電圧:
1 V
最大DCコレクタ電流:
10 A
ゲイン帯域幅積fT:
2 MHz
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
シリーズ:
MJF3055
高さ:
9.24 mm
長さ:
10.63 mm
包装:
チューブ
幅:
4.9 mm
ブランド:
オン・セミコンダクター
連続コレクタ電流:
10 A
DCコレクター/ベースゲインhfe最小:
20
Pd-消費電力:
30 W
製品タイプ:
BJT-バイポーラトランジスタ
ファクトリーパックの数量:
50
サブカテゴリ:
トランジスタ
単位重量:
0.081130 oz
Tags
MJF30, MJF3, MJF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans GP BJT NPN 90V 10A 2000mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
MJF Series 90 V 10 A NPN Complementary Silicon Power Transistor - TO-220FP
***S.I.T. Europe - USA - Asia
Power Bipolar Transistor, 10A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***ment14 APAC
BIPOLAR Transistor, NPN, 90V TO-220; Tra; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:90V;
***nell
TRANSISTOR, NPN, 90V, 10A, TO-220FP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 90V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 30W; DC Collector Current: 10A; DC Current Gain hFE: 20hFE; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C
***r Electronics
Power Bipolar Transistor, 10A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***et
TRANS GP BJT NPN 90V 10A 3PIN TO-220
***el Electronic
RES SMD 83.2K OHM 1% 1/2W 1206
***(Formerly Allied Electronics)
ON Semi D44H11G NPN Bipolar Transistor, 10 A, 80 V, 3-Pin TO-220AB
***Yang
Trans GP BJT NPN 80V 10A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
*** Stop Electro
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***enic
80V 2W 10A 40@4A1V 50MHz 1V@8A400mA NPN -55¡Í~+150¡Í@(Tj) TO-220(TO-220-3) Bipolar Transistors - BJT ROHS
***trelec
Power Transistor, TO-220, NPN, 80V
***nell
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 70W; DC Collector Current: 10A; DC Current Gain hFE: 60hFE; Transistor Case Styl
***th Star Micro
. . . for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators converters and power amplifiers.
***roFlash
Transistor, Bipolar; Si; NPN; Power; VCEO 80VDC; IC 10A; PD 36W; TO-220; hFE 40; VCEO 80V
***Yang
Trans GP BJT NPN 80V 10A 3-Pin(3+Tab) TO-220 Full-Pak Rail - Rail/Tube
***ure Electronics
MJF Series 80 V 10 A Flange Mount NPN Complementary Power Transistor - TO-220
***r Electronics
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***ponent Sense
Bipolar Transistors - BJT 10A 80V 50W NPN
***ponent Stockers USA
10 A 80 V NPN Si POWER TRANSISTOR TO-220AB
***enic
80V 36W 10A 40@4A1V 50MHz 1V@8A400mA NPN -55¡Í~+150¡Í@(Tj) TO-220(TO-220-3) Bipolar Transistors - BJT ROHS
***th Star Micro
. . . for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators converters and power amplifiers.
***nell
TRANSISTOR, BIPOL, NPN, 80V, TO-220-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 36W; DC Collector Current: 10A; DC Current Gain hFE: 40hFE; Transi
モデル メーカー 説明 ストック 価格
MJF3055G
DISTI # MJF3055GOS-ND
ON SemiconductorTRANS NPN 90V 10A TO220FP
RoHS: Compliant
Min Qty: 1
Container: Tube
1093In Stock
  • 1000:$0.7245
  • 500:$0.9177
  • 100:$1.1109
  • 50:$1.3524
  • 1:$1.5900
MJF3055G
DISTI # MJF3055G
ON SemiconductorTrans GP BJT NPN 90V 10A 3-Pin(3+Tab) TO-220 Full-Pak Rail - Rail/Tube (Alt: MJF3055G)
RoHS: Compliant
Min Qty: 1
Container: Tube
Americas - 1425
  • 1:$1.1849
  • 10:$1.0419
  • 25:$1.0389
  • 50:$1.0359
  • 100:$0.8249
  • 500:$0.7869
  • 1000:$0.6209
MJF3055G
DISTI # 45J1508
ON SemiconductorTrans GP BJT NPN 90V 10A 3-Pin(3+Tab) TO-220 Full-Pak Rail - Bulk (Alt: 45J1508)
RoHS: Compliant
Min Qty: 1
Container: Bulk
Americas - 0
  • 1:$1.5100
  • 10:$1.2900
  • 100:$0.9900
  • 500:$0.8750
  • 1000:$0.6900
  • 2500:$0.6120
  • 10000:$0.5890
MJF3055G
DISTI # 45J1508
ON SemiconductorBIPOLAR TRANSISTOR, NPN, 90V TO-220FP,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:90V,Transition Frequency ft:2MHz,Power Dissipation Pd:30W,DC Collector Current:10A,DC Current Gain hFE:20hFE,No. of Pins:3Pins RoHS Compliant: Yes503
  • 1:$0.5120
  • 10:$0.5120
  • 100:$0.5120
  • 500:$0.5120
  • 1000:$0.5120
  • 2500:$0.5120
  • 10000:$0.5120
MJF3055G.
DISTI # 27AC8986
ON SemiconductorBIP T0220FP NPN 10A 60V ROHS COMPLIANT: YES1425
  • 10000:$0.5890
  • 2500:$0.6120
  • 1000:$0.6900
  • 500:$0.8750
  • 100:$0.9900
  • 10:$1.2900
  • 1:$1.5100
MJF3055G
DISTI # 863-MJF3055G
ON SemiconductorBipolar Transistors - BJT 10A 90V 30W NPN
RoHS: Compliant
1121
  • 1:$1.5100
  • 10:$1.2900
  • 100:$0.9900
  • 500:$0.8750
  • 1000:$0.6900
  • 2500:$0.6120
  • 10000:$0.5890
MJF3055
DISTI # 863-MJF3055
ON SemiconductorBipolar Transistors - BJT 10A 90V 30W NPN
RoHS: Not compliant
0
    MJF3055GON Semiconductor 
    RoHS: Compliant
    Europe - 7612
      MJF3055G.
      DISTI # 1364622
      ON Semiconductor 
      RoHS: Compliant
      503
      • 10000:$0.9330
      • 2500:$0.9690
      • 1000:$1.1000
      • 500:$1.3900
      • 100:$1.5700
      • 10:$2.0400
      • 1:$2.4000
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      可用性
      ストック:
      747
      注文中:
      2730
      数量を入力してください:
      MJF3055Gの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格(USD)
      単価
      小計金額
      1
      $1.58
      $1.58
      10
      $1.35
      $13.50
      100
      $1.08
      $108.00
      500
      $0.94
      $472.50
      1000
      $0.78
      $782.00
      2500
      $0.73
      $1 822.50
      5000
      $0.70
      $3 510.00
      10000
      $0.68
      $6 750.00
      2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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