AOT12N50

Mfr. #:: AOT12N50
メーカー:: Alpha & Omega Semiconductor Inc
説明:: MOSFET N-CH 500V 12A TO220
ライフサイクル:: メーカー新製品
データシート:: AOT12N50 データシート
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HTML Datasheet:: AOT12N50 Datasheet AOT12N50 Datasheet (P4-P6)
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Tags: AOT12N, AOT12, AOT1, AOT

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

AOT12N50 説明

***ical: Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220 Tube

***ha & Omega Semiconductor SCT: 500V N-Channel MOSFET, TO-220-3, RoHS

***el Electronic: IC REG LINEAR 3.2V 50MA SOT23-5

***emi: N-Channel Power MOSFET, QFET®, 500 V, 12.5 A, 430 mΩ, TO-220

***et Europe: Trans MOSFET N-CH 500V 12.5A 3-Pin(3+Tab) TO-220AB Rail

***enic: 500V 12.5A 430m´Î@10V6.25A 170W 5V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***ure Electronics: N-Channel 500 V 0.43 O Flange Muont Mosfet - TO-220

***r Electronics: Power Field-Effect Transistor, 12.5A I(D), 500V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):430mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:170W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:12.5A; On State Resistance Max:430mohm; Package / Case:TO-220; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:50A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

***th Star Micro: Transistor MOSFET N-CH 500V 14A 3-Pin (3+Tab) TO-220 Tube

***icroelectronics: N-Channel 500V - 0.34 Ohm - 14A Zener-Protected SuperMesh(TM) POWER MOSFET

***ure Electronics: N-Channel 500 V 0.38 Ohm 150 W Flange Mount SuperMESH Mosfet - TO-220-3

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 14A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N CH, 500V, 14A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):340mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:14A; Package / Case:TO-220; Power Dissipation Pd:150W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

*** Source Electronics: Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 500V 10A TO-220FP

***icroelectronics: N-channel 500 V, 0.48 Ohm typ., 10 A Zener-protected SuperMESH(TM) Power MOSFET in TO-220 package

***ure Electronics: Single N-Channel 500 V 125 W 68 nC Silicon Through Hole Mosfet - TO-220-3

*** Electronics: STP11NK50Z STMicroelectronics MOSFET N-Ch 500 Volt 10 Amp Zener SuperMESH N-Channel Mosfet STP11NK50Z TO-220(ST)

***ark: MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:125W RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 10A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***emi: N-Channel Power MOSFET, UniFETTM II, 500 V, 11.5 A, 520 mΩ, TO-220

***ark: UNIFET2 500V N-CHANNEL MOSFET, TO220 - TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB

***Yang: Trans MOSFET N-CH 500V 11.5A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube

***ure Electronics: N-Channel 500 V 520 mO 30 nC Flange Mount PowerTrench® Mosfet - TO-220

***roFlash: Power Field-Effect Transistor, 11.5A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***ical: Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-220AB Tube

***ponent Stockers USA: 9 A 500 V 0.399 ohm N-CHANNEL Si POWER MOSFET TO-220AB

*** Stop Electro: Power Field-Effect Transistor, 9A I(D), 500V, 0.399ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power

***ark: MOSFET, N, TO-220; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:560V; Current, Id Cont:9A; On State Resistance:0.399ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220; ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:560V; On Resistance Rds(on):399mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:9A; Package / Case:TO-220; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:560V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-channel 500 V, 0.4 Ohm, 8.5 A MDmesh(TM) II Power MOSFET in TO-220

***et: Trans MOSFET N-CH 500V 8.5A 3-Pin(3+Tab) TO-220 Tube

***r Electronics: Power Field-Effect Transistor, 9A I(D), 500V, 0.47ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N CH, 500V, 9A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.5A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 70W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

Market price

モデル	メーカー	説明	ストック	価格
AOT12N50 DISTI # 30705201	Alpha & Omega Semiconductor	Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	950	22:$0.4603
AOT12N50 DISTI # 785-1240-5-ND	Alpha & Omega Semiconductor	MOSFET N-CH 500V 12A TO220 RoHS: Compliant Min Qty: 1 Container: Tube	12In Stock	10:$1.4140 1:$1.6000
AOT12N50 DISTI # AOT12N50	Alpha & Omega Semiconductor	Transistor: N-MOSFET,unipolar,500V,8.4A,250W,TO220	526	500:$0.5100 100:$0.5400 25:$0.6000 5:$0.6800 1:$0.7500

画像	モデル	説明
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AOT12N50

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes