IXyH100N65C3

IXyH100N65C3
Mfr. #:
IXyH100N65C3
メーカー:
Littelfuse
説明:
IGBT Transistors 650V/200A XPT C3-Class TO-247
ライフサイクル:
メーカー新製品
データシート:
IXyH100N65C3 データシート
配達:
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支払い:
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HTML Datasheet:
IXyH100N65C3 DatasheetIXyH100N65C3 Datasheet (P4-P6)
ECAD Model:
詳しくは:
IXyH100N65C3 詳しくは
製品属性
属性値
メーカー:
IXYS
製品カテゴリ:
IGBTトランジスタ
JBoss:
Y
テクノロジー:
Si
パッケージ/ケース:
TO-247-3
取り付けスタイル:
スルーホール
構成:
独身
コレクター-エミッター電圧VCEOMax:
650 V
コレクター-エミッター飽和電圧:
1.85 V
最大ゲートエミッタ電圧:
30 V
25℃での連続コレクタ電流:
200 A
Pd-消費電力:
830 W
最低動作温度:
- 55 C
最高作動温度:
+ 175 C
シリーズ:
IXYH100N65
包装:
チューブ
連続コレクタ電流IcMax:
200 A
ブランド:
IXYS
ゲートエミッタリーク電流:
100 nA
製品タイプ:
IGBTトランジスタ
ファクトリーパックの数量:
30
サブカテゴリ:
IGBT
商標名:
XPT
単位重量:
1.340411 oz
Tags
IXYH10, IXYH1, IXYH, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 200A
***i-Key
IGBT 650V 200A 830W TO247
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
モデル メーカー 説明 ストック 価格
IXYH100N65C3
DISTI # V36:1790_07768386
Littelfuse IncTrans IGBT Chip N-CH 650V 200A 830000mW 3-Pin(3+Tab) TO-247AD0
  • 30000:$4.0970
  • 15000:$4.1000
  • 3000:$4.4990
  • 300:$5.2560
  • 30:$5.3860
IXYH100N65C3
DISTI # IXYH100N65C3-ND
IXYS CorporationIGBT 650V 200A 830W TO247
Min Qty: 1
Container: Tube
316In Stock
  • 1000:$4.7912
  • 500:$5.5010
  • 250:$6.0333
  • 100:$6.3172
  • 25:$7.2756
  • 10:$7.6300
  • 1:$8.4500
IXYH100N65C3
DISTI # 747-IXYH100N65C3
IXYS CorporationIGBT Transistors 650V/200A XPT C3-Class TO-247
RoHS: Compliant
66
  • 1:$8.8700
  • 10:$7.9800
  • 25:$7.2700
  • 50:$6.6500
  • 100:$6.5600
  • 250:$5.9800
  • 500:$5.5000
  • 1000:$4.7900
IXYH100N65C3IXYS CorporationIGBT Transistors 650V/200A XPT C3-Class TO-247
RoHS: Compliant
Americas -
    IXYH100N65C3
    DISTI # IXYH100N65C3
    IXYS Corporation650V 200A 830W TO247AD
    RoHS: Compliant
    28
    • 1:€8.3900
    • 5:€5.3900
    • 30:€4.3900
    • 60:€4.2300
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    OMO.#: OMO-SMBJP6KE30CA-TP

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    FGY120T65SPD-F085

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    IGBT Transistors 650V FS Trench IGBT Gen3
    可用性
    ストック:
    66
    注文中:
    2049
    数量を入力してください:
    IXyH100N65C3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $8.87
    $8.87
    10
    $7.98
    $79.80
    25
    $7.27
    $181.75
    50
    $6.65
    $332.50
    100
    $6.56
    $656.00
    250
    $5.98
    $1 495.00
    500
    $5.50
    $2 750.00
    1000
    $4.79
    $4 790.00
    2500
    $4.73
    $11 825.00
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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