IPW65R110CFDAFKSA1

IPW65R110CFDAFKSA1
Mfr. #:
IPW65R110CFDAFKSA1
メーカー:
Infineon Technologies
説明:
MOSFET N-Ch 650V 31.2A TO247-3
ライフサイクル:
メーカー新製品
データシート:
IPW65R110CFDAFKSA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
IPW65R110CFDAFKSA1 詳しくは
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-247-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
650 V
Id-連続ドレイン電流:
31.2 A
Rds On-ドレイン-ソース抵抗:
99 mOhms
Vgs th-ゲート-ソースしきい値電圧:
3.5 V
Vgs-ゲート-ソース間電圧:
20 V
Qg-ゲートチャージ:
118 nC
最低動作温度:
- 40 C
最高作動温度:
+ 150 C
Pd-消費電力:
277.8 W
構成:
独身
チャネルモード:
強化
商標名:
CoolMOS
包装:
チューブ
高さ:
21.1 mm
長さ:
16.13 mm
シリーズ:
CoolMOS CFDA
トランジスタタイプ:
1 N-Channel
幅:
5.21 mm
ブランド:
インフィニオンテクノロジーズ
立ち下がり時間:
6 ns
製品タイプ:
MOSFET
立ち上がり時間:
11 ns
ファクトリーパックの数量:
240
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
68 ns
典型的なターンオン遅延時間:
16 ns
パーツ番号エイリアス:
IPW65R110CFDA IPW65R11CFDAXK SP000895236
単位重量:
1.340411 oz
Tags
IPW65R110CFDA, IPW65R11, IPW65R1, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet, N-Ch, Aec-Q101, 650V, To-247-3; Svhc:no Svhc (12-Jan-2017) Rohs Compliant: Yes
***et Europe
Trans MOSFET N-CH 650V 31.2A 3-Pin TO-247 Tube
***ical
Trans MOSFET N-CH 650V 31.2A
***i-Key
MOSFET N-CH 650V 31.2A TO247
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, AEC-Q101, 650V, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:277.8W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFDA Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, AEC-Q101 650V TO-247-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:31.2A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.099ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:277.8W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFDA Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
モデル メーカー 説明 ストック 価格
IPW65R110CFDAFKSA1
DISTI # IPW65R110CFDAFKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V 31.2A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
219In Stock
  • 720:$5.6983
  • 240:$6.6906
  • 10:$8.0130
  • 1:$8.8400
IPW65R110CFDAFKSA1
DISTI # SP000895236
Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-247 Tube (Alt: SP000895236)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 48
  • 1:€4.4900
  • 10:€4.0900
  • 25:€3.9900
  • 50:€3.7900
  • 100:€3.6900
  • 500:€3.4900
  • 1000:€3.2900
IPW65R110CFDAFKSA1
DISTI # IPW65R110CFDAFKSA1
Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW65R110CFDAFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 240:$4.2900
  • 480:$4.0900
  • 960:$3.9900
  • 1440:$3.7900
  • 2400:$3.7900
IPW65R110CFDAFKSA1
DISTI # IPW65R110CFDA
Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-247 Tube (Alt: IPW65R110CFDA)
RoHS: Compliant
Min Qty: 240
Container: Tube
Asia - 0
    IPW65R110CFDAFKSA1
    DISTI # 13AC9100
    Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3,SVHC:No SVHC (12-Jan-2017) RoHS Compliant: Yes15
    • 100:$5.3600
    • 50:$5.7700
    • 25:$6.1700
    • 10:$6.4700
    • 1:$7.1600
    IPW65R110CFDAFKSA1
    DISTI # 726-IPW65R110CFDAFKS
    Infineon Technologies AGMOSFET N-Ch 650V 31.2A TO247-3
    RoHS: Compliant
    348
    • 1:$7.1600
    • 10:$6.4700
    • 25:$6.1700
    • 100:$5.3600
    IPW65R110CFDA
    DISTI # 726-IPW65R110CFDA
    Infineon Technologies AGMOSFET N-Ch 650V 31.2A TO247-3
    RoHS: Compliant
    263
    • 1:$7.1600
    • 10:$6.4700
    • 25:$6.1700
    • 100:$5.3600
    IPW65R110CFDAFKSA1
    DISTI # 2726081
    Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3
    RoHS: Compliant
    15
    • 720:$8.1800
    • 240:$9.7600
    • 10:$11.8700
    • 1:$13.1800
    IPW65R110CFDAFKSA1
    DISTI # XSKDRABV0042852
    Infineon Technologies AG 
    RoHS: Compliant
    192
    • 192:$5.3600
    • 87:$5.7400
    IPW65R110CFDAFKSA1
    DISTI # 2726081
    Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3
    RoHS: Compliant
    15
    • 100:£4.1000
    • 50:£4.4100
    • 10:£4.7100
    • 5:£5.4700
    • 1:£6.0000
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    可用性
    ストック:
    267
    注文中:
    2250
    数量を入力してください:
    IPW65R110CFDAFKSA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $7.15
    $7.15
    10
    $6.46
    $64.60
    25
    $6.16
    $154.00
    100
    $5.35
    $535.00
    250
    $5.11
    $1 277.50
    500
    $4.66
    $2 330.00
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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