IXFR26N120P

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

1.2 kV

Id - Continuous Drain Current:

15 A

Rds On - Drain-Source Resistance:

500 mOhms

Vgs th - Gate-Source Threshold Voltage:

6.5 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

225 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

320 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

HiPerFET

Packaging:

Tube

Height:

21.34 mm

Length:

16.13 mm

Series:

IXFR26N120

Transistor Type:

1 N-Channel

Type:

Polar Power MOSFET HiPerFET

Width:

5.21 mm

Brand:

IXYS

Forward Transconductance - Min:

13 S

Fall Time:

58 ns

Product Type:

MOSFET

Rise Time:

55 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

76 ns

Typical Turn-On Delay Time:

56 ns

Unit Weight:

0.056438 oz

Tags

IXFR26, IXFR2, IXFR, IXF