BSC028N06NSTATMA1

BSC028N06NSTATMA1
Mfr. #:
BSC028N06NSTATMA1
メーカー:
Infineon Technologies
説明:
MOSFET DIFFERENTIATED MOSFETS
ライフサイクル:
メーカー新製品
データシート:
BSC028N06NSTATMA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
BSC028N06NSTATMA1 詳しくは
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
PG-TDSON-8
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
60 V
Id-連続ドレイン電流:
100 A
Rds On-ドレイン-ソース抵抗:
2.8 mOhms
Vgs th-ゲート-ソースしきい値電圧:
2.1 V
Vgs-ゲート-ソース間電圧:
10 V
Qg-ゲートチャージ:
37 nC
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
83 W
構成:
独身
チャネルモード:
強化
包装:
リール
トランジスタタイプ:
1 N-Channel
ブランド:
インフィニオンテクノロジーズ
フォワード相互コンダクタンス-最小:
50 S
立ち下がり時間:
8 ns
製品タイプ:
MOSFET
立ち上がり時間:
38 ns
ファクトリーパックの数量:
5000
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
19 ns
典型的なターンオン遅延時間:
11 ns
パーツ番号エイリアス:
BSC028N06NST SP001666498
Tags
BSC028N06N, BSC028N06, BSC028, BSC02, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
OptiMOS Power Transistor MOSFET N-Channel 60V 100A 8-Pin PG-TDSON T/R
***ical
Trans MOSFET N-CH 60V 24A 8-Pin TDSON EP
***i-Key
DIFFERENTIATED MOSFETS
***ark
Mosfet, N-Ch, 60V, 100A, 100W, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0023Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 100A, 100W, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:100W; Transistor Case Style:TDSON; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CAN N, 60V, 100A, 100W, TDSON; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0023ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:100W; Modello Case Transistor:TDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
モデル メーカー 説明 ストック 価格
BSC028N06NSTATMA1
DISTI # BSC028N06NSTATMA1TR-ND
Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.9823
BSC028N06NSTATMA1
DISTI # BSC028N06NSTATMA1CT-ND
Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$1.1285
  • 500:$1.3620
  • 100:$1.7511
  • 10:$2.1790
  • 1:$2.4100
BSC028N06NSTATMA1
DISTI # BSC028N06NSTATMA1DKR-ND
Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$1.1285
  • 500:$1.3620
  • 100:$1.7511
  • 10:$2.1790
  • 1:$2.4100
BSC028N06NSTATMA1
DISTI # BSC028N06NSTATMA1
Infineon Technologies AGOptiMOS Power Transistor MOSFET N-Channel 60V 100A 8-Pin PG-TDSON T/R - Tape and Reel (Alt: BSC028N06NSTATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.9889
  • 10000:$0.9539
  • 20000:$0.9189
  • 30000:$0.8879
  • 50000:$0.8719
BSC028N06NSTATMA1
DISTI # 726-BSC028N06NSTATM1
Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant
0
  • 1:$2.0300
  • 10:$1.7200
  • 100:$1.3800
  • 500:$1.2100
  • 1000:$0.9960
  • 2500:$0.9280
  • 5000:$0.8940
画像 モデル 説明
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OMO.#: OMO-TPS7B8233QDGNRQ1

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OMO.#: OMO-RB060MM-30TFTR-ROHM-SEMI

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Mfr.#: MCP47CVB22-E/MF

OMO.#: OMO-MCP47CVB22-E-MF-MICROCHIP-TECHNOLOGY

I2C, Dual Channel, 12-Bit, Volatile
BSC016N06NS

Mfr.#: BSC016N06NS

OMO.#: OMO-BSC016N06NS-1190

MOSFET N-Ch 60V 100A DSON-8 OptiMOS
TPS7B8233QDGNRQ1

Mfr.#: TPS7B8233QDGNRQ1

OMO.#: OMO-TPS7B8233QDGNRQ1-TEXAS-INSTRUMENTS

PWR MGMT SWITCHING REGULATOR
C0805X103J3GACTU

Mfr.#: C0805X103J3GACTU

OMO.#: OMO-C0805X103J3GACTU-1190

CAP, 0.01F, 25V, 5%, C0G/NP0, 0805
可用性
ストック:
Available
注文中:
1991
数量を入力してください:
BSC028N06NSTATMA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$2.02
$2.02
10
$1.71
$17.10
100
$1.37
$137.00
500
$1.20
$600.00
1000
$1.00
$996.00
2500
$0.93
$2 320.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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