R6024ENZC8

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-3PF-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

24 A

Rds On - Drain-Source Resistance:

150 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

70 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

120 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Series:

Super Junction-MOS EN

Transistor Type:

1 N-Channel

Brand:

ROHM Semiconductor

Forward Transconductance - Min:

6.5 S

Fall Time:

50 ns

Product Type:

MOSFET

Rise Time:

50 ns

Factory Pack Quantity:

360

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

180 ns

Typical Turn-On Delay Time:

35 ns

Part # Aliases:

R6024ENZ

Unit Weight:

0.000353 oz

Tags

R6024E, R6024, R602, R60