FDS4435BZ-F085

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SO-8

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

8.8 A

Rds On - Drain-Source Resistance:

26 mOhms

Vgs - Gate-Source Voltage:

25 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.5 W

Configuration:

Single

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Tradename:

PowerTrench

Packaging:

Reel

Height:

1.75 mm

Length:

4.9 mm

Series:

FDS4435BZ_F085

Transistor Type:

1 P-Channel

Type:

Power Trench MOSFET

Width:

3.9 mm

Brand:

ON Semiconductor / Fairchild

Forward Transconductance - Min:

24 S

Fall Time:

12 ns

Product Type:

MOSFET

Rise Time:

6 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

30 ns

Typical Turn-On Delay Time:

10 ns

Part # Aliases:

FDS4435BZ_F085

Unit Weight:

0.008127 oz

Tags

FDS4435BZ, FDS4435B, FDS4435, FDS443, FDS44, FDS4, FDS