BSC066N06NSATMA1

BSC066N06NSATMA1
Mfr. #:
BSC066N06NSATMA1
メーカー:
Infineon Technologies
説明:
MOSFET MV POWER MOS
ライフサイクル:
メーカー新製品
データシート:
BSC066N06NSATMA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSC066N06NSATMA1 DatasheetBSC066N06NSATMA1 Datasheet (P4-P6)BSC066N06NSATMA1 Datasheet (P7-P9)BSC066N06NSATMA1 Datasheet (P10)
ECAD Model:
詳しくは:
BSC066N06NSATMA1 詳しくは
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
PG-TDSON-8
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
60 V
Id-連続ドレイン電流:
64 A
Rds On-ドレイン-ソース抵抗:
6.6 mOhms
Vgs th-ゲート-ソースしきい値電圧:
2.1 V
Vgs-ゲート-ソース間電圧:
10 V
Qg-ゲートチャージ:
17 nC
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
46 W
構成:
独身
チャネルモード:
強化
商標名:
OptiMOS
包装:
リール
高さ:
1.27 mm
長さ:
5.9 mm
シリーズ:
OptiMOS 5
トランジスタタイプ:
1 N-Channel
幅:
5.15 mm
ブランド:
インフィニオンテクノロジーズ
フォワード相互コンダクタンス-最小:
32 S
立ち下がり時間:
3 ns
製品タイプ:
MOSFET
立ち上がり時間:
3 ns
ファクトリーパックの数量:
5000
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
12 ns
典型的なターンオン遅延時間:
7 ns
パーツ番号エイリアス:
BSC066N06NS SP001067000
単位重量:
0.003527 oz
Tags
BSC066, BSC06, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    S***v
    S***v
    RU

    Norms all on 8 ohms

    2019-06-03
    A***o
    A***o
    UA

    Came 3 volt seules,In the photo innotecsQuality is normal, color is correct

    2019-05-02
***et
Trans MOSFET N-CH 60V 64A 8-Pin TDSON T/R
***nell
MOSFET, N-CH, 60V, 64A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 64A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0055ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 46W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***emi
Single N-Channel Power MOSFET 60V, 71A, 6.1mΩ Power MOSFET 60 V, 6.4 mohm, 67 A, Single N-Channel
***ical
Trans MOSFET N-CH 60V 17A Automotive 5-Pin(4+Tab) SO-FL T/R
*** Stop Electro
Power Field-Effect Transistor, 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ure Electronics
N-Channel 60V 17A, 71A 3.6W 61W Surface Mount 5-DFN (5x6) MOSFET
***enic
60V 17A 3.6W 6.1m´Î@10V35A 2V@250Ã×A N Channel DFN-5 MOSFETs ROHS
***nell
MOSFET, N-CH, 60V, 71A, DFN-5; Transistor Polarity: N Channel; Continuous Drain Current Id: 71A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0051ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 61W; Transistor Case Style: DFN; No. of Pins: 5Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ure Electronics
NTMFS5 Series 60 V 17 A 6.1 mOhm Single N-Channel MOSFET - DFN-5
***Yang
Trans MOSFET N-CH 60V 71A 8-Pin SO-FL T/R - Tape and Reel
***enic
60V 71A 3.6W 6.1m´Î@10V35A 2V@250Ã×A N Channel SO-8FL MOSFETs ROHS
***ark
NFET SO8FL 40V 68A 6.7MOH / REEL ROHS COMPLIANT: YES
***nell
MOSFET, N-CH, 60V, 71A, DFN-5; Transistor Polarity: N Channel; Continuous Drain Current Id: 71A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0051ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power
*** Source Electronics
Single N-Channel Field Effect Transistor
*** Stop Electro
Power Field-Effect Transistor, 71A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
*** Services
CoC and 2-years warranty / RFQ for pricing
***et
Trans MOSFET N-CH 60V 21.5A 8-Pin PowerPAK SO T/R
*** Americas
MOSFET 60V 6mOhm@10V 60A N-Ch G-IV
***i-Key
MOSFET N-CH 60V 60A PPAK SO-8
***ark
N-Channel 60-V (D-S) Mosfet
*** Europe
N-CH POWERPAK 60V SO-8 BWL
***et Europe
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) TO-263
***or
MOSFET N-CH 60V 80A TO263-3
***i-Key Marketplace
N-CHANNEL POWER MOSFET
***el Electronic
Power Field-Effect Transistor, 80A I(D), 60V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
***el Nordic
Contact for details
***emi
Single N-Channel Power MOSFET 60V, 70A, 6.5mΩ Power MOSFET 60V, 70A, 6.5 mOhm, Single N-Channel, u8FL, Logic Level
***Yang
Trans MOSFET N-CH 60V 16A 8-Pin WDFN T/R - Tape and Reel
***roFlash
Power Field-Effect Transistor, 16A I(D), 60V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N-CH, AEC-Q101, 60V, 70A, WDFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0054ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 63W; Transistor Case Style: WDFN; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ark
Mosfet Transistor, N Channel, 79 A, 60 V, 0.0071 Ohm, 10 V, 4 V
***ure Electronics
Single N-Channel 60 V 8.4 mOhm 46 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH 60V 79A 3-Pin(2+Tab) D2PAK Tube
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 60V,RDS(ON) 7.1 Milliohms,ID 79A,D2Pak,PD 110W,VGS+/-20V
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
モデル メーカー 説明 ストック 価格
BSC066N06NSATMA1
DISTI # BSC066N06NSATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 60V 64A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.5144
BSC066N06NSATMA1
DISTI # BSC066N06NSATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 60V 64A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.5976
  • 500:$0.7569
  • 100:$0.9760
  • 10:$1.2350
  • 1:$1.3900
BSC066N06NSATMA1
DISTI # BSC066N06NSATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 60V 64A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.5976
  • 500:$0.7569
  • 100:$0.9760
  • 10:$1.2350
  • 1:$1.3900
BSC066N06NSATMA1
DISTI # BSC066N06NSATMA1
Infineon Technologies AGTrans MOSFET N-CH 60V 64A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC066N06NSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.5059
  • 5002:$0.4879
  • 10002:$0.4699
  • 25000:$0.4539
  • 50000:$0.4459
BSC066N06NSATMA1
DISTI # 13AC8334
Infineon Technologies AGMOSFET, N-CH, 60V, 64A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:64A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0055ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power DissipationRoHS Compliant: Yes0
  • 1:$1.1600
  • 10:$0.9850
  • 25:$0.9090
  • 50:$0.8320
  • 100:$0.7560
  • 250:$0.7130
  • 500:$0.6690
  • 1000:$0.5280
BSC066N06NS
DISTI # 726-BSC066N06NS
Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant
0
  • 1:$1.1600
  • 10:$0.9850
  • 100:$0.7560
  • 500:$0.6690
  • 1000:$0.5280
  • 5000:$0.4680
BSC066N06NSATMA1
DISTI # 726-BSC066N06NSATMA1
Infineon Technologies AGMOSFET MV POWER MOS
RoHS: Compliant
0
  • 1:$1.1600
  • 10:$0.9850
  • 100:$0.7560
  • 500:$0.6690
  • 1000:$0.5280
  • 5000:$0.4680
BSC066N06NSATMA1
DISTI # 2725811
Infineon Technologies AGMOSFET, N-CH, 60V, 64A, TDSON
RoHS: Compliant
0
  • 5:£0.8370
  • 25:£0.7520
  • 100:£0.5780
  • 250:£0.5450
  • 500:£0.5110
BSC066N06NSATMA1
DISTI # 2725811
Infineon Technologies AGMOSFET, N-CH, 60V, 64A, TDSON
RoHS: Compliant
0
  • 1:$2.2200
  • 10:$1.9700
  • 100:$1.5600
  • 500:$1.2100
  • 1000:$0.9530
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SS5P10-M3/86A

Mfr.#: SS5P10-M3/86A

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Mfr.#: SS16

OMO.#: OMO-SS16

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Mfr.#: TDP142IRNQT

OMO.#: OMO-TDP142IRNQT

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3266W-1-103LF

Mfr.#: 3266W-1-103LF

OMO.#: OMO-3266W-1-103LF

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可用性
ストック:
Available
注文中:
1987
数量を入力してください:
BSC066N06NSATMA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$1.15
$1.15
10
$0.98
$9.85
100
$0.76
$75.60
500
$0.67
$334.50
1000
$0.53
$528.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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