SQP100P06-9M3L_GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

100 A

Rds On - Drain-Source Resistance:

7.2 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

300 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

187 W

Configuration:

Single

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Tradename:

TrenchFET

Packaging:

Tube

Series:

SQ

Transistor Type:

1 P-Channel

Brand:

Vishay / Siliconix

Forward Transconductance - Min:

82 S

Fall Time:

36 ns

Product Type:

MOSFET

Rise Time:

12 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

85 ns

Typical Turn-On Delay Time:

18 ns

Unit Weight:

0.063493 oz

Tags

SQP100, SQP10, SQP1, SQP