IRF40DM229

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

DirectFET-MF

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

40 V

Id - Continuous Drain Current:

159 A

Rds On - Drain-Source Resistance:

1.4 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

161 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

83 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

StrongIRFET

Packaging:

Reel

Transistor Type:

1 N-Channel

Brand:

Infineon Technologies

Forward Transconductance - Min:

87 S

Fall Time:

54 ns

Product Type:

MOSFET

Rise Time:

66 ns

Factory Pack Quantity:

4800

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

54 ns

Typical Turn-On Delay Time:

16 ns

Part # Aliases:

SP001576692

Tags

IRF40, IRF4, IRF