MR0A08BYS35R

Mfr. #:: MR0A08BYS35R
メーカー:: Everspin Technologies
説明:: NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
ライフサイクル:: メーカー新製品
データシート:: MR0A08BYS35R データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:
詳しくは:: MR0A08BYS35R 詳しくは

製品属性
属性値

メーカー: Everspin Technologies Inc.

製品カテゴリ: メモリー

シリーズ: MR0A08B

包装: テープ＆リール（TR）代替パッケージ

取り付けスタイル: SMD / SMT

パッケージ-ケース: TSOP-44

作動温度: 0°C ~ 70°C (TA)

インターフェース: 平行

電圧供給: 3 V ~ 3.6 V

サプライヤー-デバイス-パッケージ: 44-TSOP2 (10.2x18.4)

メモリー容量: 1M (128K x 8)

メモリタイプ: MRAM（磁気抵抗RAM）

スピード: 35ns

アクセス時間: 35 ns

フォーマット-メモリ: 羊

最高作動温度: + 70 C

最低作動温度: 0 C

動作-供給-電流: 55 mA

インターフェイスタイプ: 平行

組織: 128 k x 8

データバス幅: 8 bit

供給-電圧-最大: 3.6 V

供給-電圧-最小: 3 V

Tags: MR0A0, MR0A, MR0

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MR0A08BYS35R 評価とレビュー

L***v

Corresponds to the description

2019-07-29

V***.

Great store.

2019-06-02

I***n

good work

2019-04-22

MR0A08BYS35R 説明

***et Europe: NVRAM MRAM Parallel 1M-Bit 3.3V 44-Pin TSOP-II T/R

***i-Key: IC RAM 1MBIT PARALLEL 44TSOP2

***S: new, original packaged

MR0A08BYS35R 詳しくは

Magnetoresistive Random Access Memory (MRAM): Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

Everspin MRAM

MR0A08B / MR0D08B / MR0A16A 1Mb Parallel MRAM: Everspin Technologies MR0A08B, MR0D08B, and MR0A16A are 1,048,576-bit magnetoresistive random access memory (MRAM) devices. The Everspin MRAM devices are available in a variety of specifications, such as dual supply, serial SPI, and organized as 131,072 words of 8 bits or 65,536 words of 16 bits. These MRAM devices are as fast 35ns or 45ns read/write timing cycles with no write delays and unlimited read/write endurance.

Market price

モデル	メーカー	説明	ストック	価格
MR0A08BYS35R DISTI # MR0A08BYS35R	Everspin Technologies	NVRAM MRAM Parallel 1M-Bit 3.3V 44-Pin TSOP-II T/R (Alt: MR0A08BYS35R) RoHS: Compliant Min Qty: 1500 Container: Tape and Reel	Europe - 0	1500:€9.0900 3000:€8.6900 6000:€8.3900 9000:€7.7900 15000:€7.1900
MR0A08BYS35 DISTI # 936-MR0A08BYS35	Everspin Technologies	NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM RoHS: Compliant	220	1:$10.9500 10:$10.1500 25:$9.9200 50:$9.8600 100:$8.6800 250:$8.2500 500:$8.1700
MR0A08BYS35R DISTI # 936-MR0A08BYS35R	Everspin Technologies	NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM RoHS: Compliant	0	1:$11.3200 10:$10.4800 25:$10.2400 50:$10.1900 100:$8.9700 250:$8.5300 500:$8.4400 1000:$8.3100 1500:$7.9300

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