BSM200GA120DN2

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

IGBT Modules

RoHS:

Y

Product:

IGBT Silicon Modules

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

1200 V

Collector-Emitter Saturation Voltage:

2.5 V

Continuous Collector Current at 25 C:

300 A

Gate-Emitter Leakage Current:

200 nA

Pd - Power Dissipation:

1550 W

Package / Case:

62 mm

Minimum Operating Temperature:

- 40 C

Maximum Operating Temperature:

+ 150 C

Packaging:

Tray

Height:

36.5 mm

Length:

106.4 mm

Width:

61.4 mm

Brand:

Infineon Technologies

Mounting Style:

Chassis Mount

Maximum Gate Emitter Voltage:

20 V

Product Type:

IGBT Modules

Factory Pack Quantity:

10

Subcategory:

IGBTs

Part # Aliases:

BSM200GA120DN2HOSA1 SP000100725

Tags

BSM200GA120DN2, BSM200GA120DN, BSM200GA12, BSM200GA1, BSM200GA, BSM200G, BSM200, BSM20, BSM2, BSM