RUE002N02TL

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-416-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

200 mA

Rds On - Drain-Source Resistance:

1.2 Ohms

Vgs th - Gate-Source Threshold Voltage:

300 mV

Vgs - Gate-Source Voltage:

2.5 V

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

150 mW

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Product:

MOSFET Small Signal

Series:

RUE002N02

Transistor Type:

1 N-Channel MOSFET

Brand:

ROHM Semiconductor

Fall Time:

10 ns

Product Type:

MOSFET

Rise Time:

10 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

15 ns

Typical Turn-On Delay Time:

5 ns

Part # Aliases:

RUE002N02

Unit Weight:

0.000282 oz

Tags

RUE002N02, RUE002N, RUE002, RUE00, RUE0, RUE