ZXMN6A08E6TA

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-26-6

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

3.5 A

Rds On - Drain-Source Resistance:

80 mOhms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

5.8 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1.1 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

1.3 mm

Length:

3.1 mm

Product:

MOSFET Small Signal

Series:

ZXMN6A0

Transistor Type:

1 N-Channel

Type:

MOSFET

Width:

1.8 mm

Brand:

Diodes Incorporated

Forward Transconductance - Min:

6.6 S

Fall Time:

4.6 ns

Product Type:

MOSFET

Rise Time:

2.1 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

12.3 ns

Typical Turn-On Delay Time:

2.6 ns

Unit Weight:

0.000282 oz

Tags

ZXMN6A08E6TA, ZXMN6A08E6T, ZXMN6A08E, ZXMN6A08, ZXMN6A0, ZXMN6A, ZXMN6, ZXMN, ZXM