S29GL01GS12DHIV10

Mfr. #:: S29GL01GS12DHIV10
メーカー:: Cypress Semiconductor
説明:: IC FLASH 1G PARALLEL 64FBGA GL-S
ライフサイクル:: メーカー新製品
データシート:: S29GL01GS12DHIV10 データシート
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詳しくは:: S29GL01GS12DHIV10 詳しくは S29GL01GS12DHIV10 Product Details

製品属性
属性値

メーカー: Spansio

製品カテゴリ: メモリー

シリーズ: GL-S

包装: トレイ

取り付けスタイル: SMD / SMT

動作-温度-範囲: - 40 C to + 85 C

パッケージ-ケース: FBGA-64

作動温度: -40°C ~ 85°C (TA)

インターフェース: 平行

電圧供給: 1.65 V ~ 3.6 V

サプライヤー-デバイス-パッケージ: 64-FBGA (9x9)

メモリー容量: 1G (64M x 16)

メモリタイプ: フラッシュ-NOR

スピード: 120ns

建築: Eclipse

フォーマット-メモリ: 閃光

インターフェイスタイプ: 平行

組織: 64 M x 16

供給-電流-最大: 100 mA

データバス幅: 16 bit

供給-電圧-最大: 3.6 V

供給-電圧-最小: 2.7 V

タイミングタイプ: 非同期

Tags: S29GL01GS12D, S29GL01GS12, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

S29GL01GS12DHIV10 説明

***ress Semiconductor SCT: Parallel NOR Flash Memory, 1024 Mbit Density, 120 ns Initial Access Time, FBGA-64, RoHS

***ical: NOR Flash Parallel 3V/3.3V 1G-bit 64M x 16 120ns 64-Pin Fortified BGA Tray

***ure Electronics: 1-Gbit (128 Mbyte) 3.0 V, GL-S Flash Memory

***ponent Stockers: 128M X 8 FLASH 2.7V PROM 120 ns PBGA64

***ark: 1G BIT, 3V, 120NS, 64-BALL FBG

S29GL01GS12DHIV10 詳しくは

S29 GL-S MirrorBit® Eclipse™ Flash: Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.

Market price

モデル	メーカー	説明	ストック	価格
S29GL01GS12DHIV10 DISTI # S29GL01GS12DHIV10-ND	Cypress Semiconductor	IC FLASH 1G PARALLEL 64FBGA RoHS: Compliant Min Qty: 260 Container: Tray	Temporarily Out of Stock	260:$8.4500
S29GL01GS12DHIV10 DISTI # 48T7578	Cypress Semiconductor	TRAY PKGED / 1G BIT, 3V, 120NS, 64-BALL FBGA, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, VIO, HIGHEST ADDRESS SECTOR PROTECTED	0	1:$8.4400 10:$8.0900 25:$7.8500 50:$7.6700 100:$7.5600 200:$7.3800 1000:$7.3200
S29GL01GS12DHIV10 DISTI # 797-S29GL01GS12DHIV1	Cypress Semiconductor	NOR Flash 1G 3V 120ns Parallel NOR Flash RoHS: Compliant	0	1:$10.6900 10:$9.9000 25:$9.6800 50:$9.6200 100:$8.4700 250:$8.0600

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