MMST5401-7-F

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

SMD/SMT

Package / Case:

SOT-323-3

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

150 V

Collector- Base Voltage VCBO:

160 V

Emitter- Base Voltage VEBO:

5 V

Collector-Emitter Saturation Voltage:

200 mV

Maximum DC Collector Current:

200 mA

Gain Bandwidth Product fT:

300 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Series:

MMST5401

DC Current Gain hFE Max:

240

Height:

1 mm

Length:

2.2 mm

Packaging:

Reel

Width:

1.35 mm

Brand:

Diodes Incorporated

Continuous Collector Current:

200 mA

DC Collector/Base Gain hfe Min:

50

Pd - Power Dissipation:

200 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

3000

Subcategory:

Transistors

Unit Weight:

0.000176 oz

Tags

MMST54, MMST5, MMST, MMS