BSC039N06NSATMA1

BSC039N06NSATMA1
Mfr. #:
BSC039N06NSATMA1
メーカー:
Infineon Technologies
説明:
MOSFET N-Ch 60V 100A TDSON-8
ライフサイクル:
メーカー新製品
データシート:
BSC039N06NSATMA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
BSC039N06NSATMA1 詳しくは
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
PG-TDSON-8
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
60 V
Id-連続ドレイン電流:
100 A
Rds On-ドレイン-ソース抵抗:
3.9 mOhms
Vgs th-ゲート-ソースしきい値電圧:
2.1 V
Vgs-ゲート-ソース間電圧:
10 V
Qg-ゲートチャージ:
27 nC
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
69 W
構成:
独身
チャネルモード:
強化
商標名:
OptiMOS
包装:
リール
高さ:
1.27 mm
長さ:
5.9 mm
シリーズ:
OptiMOS 5
トランジスタタイプ:
1 N-Channel
幅:
5.15 mm
ブランド:
インフィニオンテクノロジーズ
フォワード相互コンダクタンス-最小:
42 S
立ち下がり時間:
7 ns
製品タイプ:
MOSFET
立ち上がり時間:
12 ns
ファクトリーパックの数量:
5000
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
20 ns
典型的なターンオン遅延時間:
12 ns
パーツ番号エイリアス:
BSC039N06NS BSC39N6NSXT SP000985386
単位重量:
0.004169 oz
Tags
BSC039N06, BSC039, BSC03, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 10, N-Channel MOSFET, 100 A, 60 V, 8-Pin TDSON Infineon BSC039N06NSATMA1
***ure Electronics
Single N-Channel 60 V 3.9 mOhm 27 nC OptiMOS™ Power Mosfet - TDSON-8
***p One Stop Japan
Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R
***et Europe
Trans MOSFET N-CH 60V 100A 8-Pin TDSON T/R
***ical
Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP
***an P&S
60V,6.9mΩ,100A,N-Channel Power MOSFET
***ark
MOSFET, N-CH, 60V, 100A, TDSON-8
***i-Key
MOSFET N-CH 60V 19A TDSON-8
***ronik
N-CH 60V 100A 3.9mOhm SON-8
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 100A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:69W; Transistor Case Style:TDSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CANALE N 60V 100A TDSON-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0033ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:69W; Modello Case Transistor:TDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 3 - 168 ore; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
モデル メーカー 説明 ストック 価格
BSC039N06NSATMA1
DISTI # V72:2272_06383845
Infineon Technologies AGTrans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R
RoHS: Compliant
416
  • 500:$0.7943
  • 250:$1.0183
  • 100:$1.0295
  • 25:$1.2359
  • 10:$1.2504
  • 1:$1.4301
BSC039N06NSATMA1
DISTI # BSC039N06NSATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 60V 19A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
39792In Stock
  • 1000:$0.9879
  • 500:$1.1922
  • 100:$1.5329
  • 10:$1.9080
  • 1:$2.1100
BSC039N06NSATMA1
DISTI # BSC039N06NSATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 60V 19A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
39792In Stock
  • 1000:$0.9879
  • 500:$1.1922
  • 100:$1.5329
  • 10:$1.9080
  • 1:$2.1100
BSC039N06NSATMA1
DISTI # BSC039N06NSATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 60V 19A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
35000In Stock
  • 5000:$0.8599
BSC039N06NSATMA1
DISTI # 30180726
Infineon Technologies AGTrans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R
RoHS: Compliant
416
  • 500:$0.9050
  • 250:$1.0169
  • 100:$1.0283
  • 25:$1.2344
  • 10:$1.2493
BSC039N06NSATMA1
DISTI # BSC039N06NSATMA1
Infineon Technologies AGTrans MOSFET N-CH 60V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC039N06NSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.8419
  • 10000:$0.8399
  • 20000:$0.8379
  • 30000:$0.8359
  • 50000:$0.8339
BSC039N06NSATMA1
DISTI # 50Y1802
Infineon Technologies AGMOSFET Transistor, N Channel, 100 A, 60 V, 0.0033 ohm, 10 V, 2.8 V RoHS Compliant: Yes100
  • 1:$1.7700
  • 10:$1.5000
  • 25:$1.4000
  • 50:$1.3000
  • 100:$1.2000
  • 250:$1.1300
  • 500:$1.0500
  • 1000:$0.8720
BSC039N06NS
DISTI # 726-BSC039N06NS
Infineon Technologies AGMOSFET N-Ch 60V 100A TDSON-8
RoHS: Compliant
2110
  • 1:$1.7700
  • 10:$1.5100
  • 100:$1.2100
  • 500:$1.0600
  • 1000:$0.8720
  • 2500:$0.8120
  • 5000:$0.7820
BSC039N06NSATMA1
DISTI # 726-BSC039N06NSATMA1
Infineon Technologies AGMOSFET N-Ch 60V 100A TDSON-8
RoHS: Compliant
167
  • 1:$1.7700
  • 10:$1.5000
  • 100:$1.2000
  • 500:$1.0500
  • 1000:$0.8720
  • 2500:$0.8120
  • 5000:$0.7820
BSC039N06NSATMA1Infineon Technologies AGSingle N-Channel 60 V 3.9 mOhm 27 nC OptiMOS Power Mosfet - TDSON-8
RoHS: Not Compliant
5000Reel
  • 5000:$0.7400
BSC039N06NSATMA1
DISTI # 9064292P
Infineon Technologies AGMOSFET N-CHANNEL 60V 100A OPTIMOS TDSON8, RL10
  • 50:£0.8600
  • 250:£0.7500
  • 500:£0.6370
  • 1250:£0.5270
BSC039N06NSATMA1
DISTI # 9064292
Infineon Technologies AGMOSFET N-CHANNEL 60V 100A OPTIMOS TDSON8, PK210
  • 10:£1.0400
  • 50:£0.8600
  • 250:£0.7500
  • 500:£0.6370
  • 1250:£0.5270
BSC039N06NSATMA1
DISTI # 2480737RL
Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TDSON-8
RoHS: Compliant
0
  • 1:$2.8100
  • 10:$2.4000
  • 100:$1.9200
  • 500:$1.6800
  • 1000:$1.3800
  • 2500:$1.2900
  • 5000:$1.2400
BSC039N06NSATMA1
DISTI # 2480737
Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TDSON-8
RoHS: Compliant
0
  • 1:$2.8100
  • 10:$2.4000
  • 100:$1.9200
  • 500:$1.6800
  • 1000:$1.3800
  • 2500:$1.2900
  • 5000:$1.2400
BSC039N06NSATMA1
DISTI # 2480737
Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TDSON-8
RoHS: Compliant
0
  • 5:£1.0500
  • 25:£0.8690
  • 100:£0.8120
  • 250:£0.7580
  • 500:£0.6430
BSC039N06NSATMA1
DISTI # C1S322000464359
Infineon Technologies AGMOSFETs
RoHS: Compliant
4120
  • 5000:$0.6720
BSC039N06NSATMA1
DISTI # C1S322000654314
Infineon Technologies AGMOSFETs
RoHS: Compliant
916
  • 250:$1.0519
  • 100:$1.0549
  • 25:$1.2553
  • 10:$1.2602
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可用性
ストック:
Available
注文中:
1988
数量を入力してください:
BSC039N06NSATMA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$1.77
$1.77
10
$1.50
$15.00
100
$1.20
$120.00
500
$1.05
$525.00
1000
$0.87
$872.00
2500
$0.81
$2 030.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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