STD1NK80Z-1

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-251-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

800 V

Id - Continuous Drain Current:

1 A

Rds On - Drain-Source Resistance:

16 Ohms

Vgs th - Gate-Source Threshold Voltage:

3.75 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

7.7 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

45 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

6.2 mm

Length:

6.6 mm

Series:

STQ1NK80ZR-AP

Transistor Type:

1 N-Channel

Width:

2.4 mm

Brand:

STMicroelectronics

Forward Transconductance - Min:

0.8 S

Fall Time:

55 ns

Product Type:

MOSFET

Rise Time:

30 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

22 ns

Typical Turn-On Delay Time:

8 ns

Unit Weight:

0.139332 oz

Tags

STD1NK8, STD1NK, STD1N, STD1, STD