2SJ243-T1-A

Mfr. #:: 2SJ243-T1-A
Manufacturer:: Rochester Electronics, LLC
Description:: Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET
Lifecycle:: New from this manufacturer.
Datasheet:: 2SJ243-T1-A Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: RENESAS

Product Category: IC Chips

Tags: 2SJ243-T1, 2SJ243-T, 2SJ243, 2SJ24, 2SJ2, 2SJ

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

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2SJ243-T1-A Description

***ical: Trans MOSFET P-CH 30V 0.1A 3-Pin SC-75 T/R

***ser: Single MOSFET Single MOSFET Pch

***i-Key Marketplace: MOSFET P-CH 30V 100MA SC75-3 USM

***emi: N-Channel MOSFET, Enhancement Mode, 60V, 0.115A, 2Ω

***et Europe: Transistor MOSFET Array Dual N-CH 60V 0.115A 6-Pin SOT-363 T/R

***ure Electronics: N-Channel 60 V 7.5 Ohm SMT Enhancement Mode Field Effect Transistor - SOT-363

***trelec: Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) mA = 115 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 7.5 / Gate-Source Voltage V = 20 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 200

***(Formerly Allied Electronics): SI1031R-T1-GE3 P-channel MOSFET Transistor; 100 mA; 20 V; 3-Pin SC-75A

***ure Electronics: Single P-Channel 20 V 8 Ohms Surface Mount Power Mosfet - SC-75A

***ark: Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:140Ma; On Resistance Rds(On):20Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.2V; Msl:- Rohs Compliant: No

***nell: MOSFET, P, SC-75A; Transistor Polarity: P Channel; Continuous Drain Current Id: 140mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 20ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1.2V; Power Dissipation Pd: 250mW; Transistor Case Style: SC-75; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jun-2015); Alternate Case Style: SOT-416; Current Id Max: -140mA; ESD HBM: 2kV; External Depth: 1.7mm; External Length / Height: 0.8mm; External Width: 1.6mm; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 250W; Pulse Current Idm: 500mA; SMD Marking: H; Voltage Vds Typ: -20V; Voltage Vgs Max: 6V; Voltage Vgs Rds on Measurement: 1.5V; Voltage Vgs th Max: -1.2V; Voltage Vgs th Min: -0.4V

***(Formerly Allied Electronics): SI1062X-T1-GE3 N-channel MOSFET Transistor; 0.53 A; 20 V; 3-Pin SC-89

***ment14 APAC: MOSFET, N-CH, 20V, 0.53A, SC-89; Transistor Polarity:N Channel; Continuous Drain Current Id:530mA; Source Voltage Vds:20V; On Resistance

***nell: MOSFET, N-CH, 20V, 0.53A, SC-89; Transistor Polarity: N Channel; Continuous Drain Current Id: 530mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 220mW; Transistor Case Style: SC-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

***roFlash: Mosfet; Power; N-ch; Vdss 20V; Rds(on) 5 Ohms; Id 140MA; SC-75A (SOT-416); Pd 250MW

***ure Electronics: Single N-Channel 20 V 5 Ohms Surface Mount Power Mosfet - SC-75A

*** Source Electronics: Trans MOSFET N-CH 20V 0.14A 3-Pin SC-75A T/R / MOSFET N-CH 20V 140MA SC-75A

***ment14 APAC: MOSFET ESD, N CH, 20V, 0.14A, SC89; Transistor Polarity:N Channel; Continuous Drain Current Id:140mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:250mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:140mA; Power Dissipation Pd:250mW; Voltage Vgs Max:6V

***emi: P-Channel PowerTrench® MOSFET, 2.5V Specified, -1.2 A, 180 mΩ

***ment14 APAC: MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):187mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:750mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.2A; Package / Case:SC70; Power Dissipation Pd:750mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:8V

***rchild Semiconductor: This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.

***emi: P-Channel (-1.5V) Specified PowerTrench® MOSFET -20V, -0.83A, 0.5Ω

***nell: MOSFET, P CH, -20V, -0.83A, SC-89-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -830mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.28ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -700mV; Power Dissipation Pd: 625mW; Transistor Case Style: SC-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***rchild Semiconductor: This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the r DS(on)@VGS = –1.5 V.

Market price

Part #	Mfg.	Description	Stock	Price
2SJ243-T1-A	Renesas Electronics Corporation	Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET RoHS: Compliant	41333	1000:$0.1800 500:$0.1900 100:$0.2000 25:$0.2100 1:$0.2300

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Availability

Stock:: Available
On Order:: 4500
Enter Quantity:

Current price of 2SJ243-T1-A is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.27~~; ~~$0.27~~

10: ~~$0.26~~; ~~$2.56~~

100: ~~$0.24~~; ~~$24.30~~

500: ~~$0.23~~; ~~$114.75~~

1000: ~~$0.22~~; ~~$216.00~~

Start with

2SJ243-T1 5
2SJ243-T 6
2SJ243 9
2SJ24 34
2SJ2 250
2SJ 1533

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2SJ243-T1-A

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes